A high-frequency GaInP/GaAs heterojunction bipolar transistor with reduced base-collector capacitance using a selective buried sub-collector

IEEE Electron Device Letters

Volumn 17, Issue 11, 1996, Pages 531-533

  Yang, Yue Fei ^a,b   Hsu, Chung Chi ^c   Yang, Edward S ^a,b   Ou, Hai Jiang ^b  

^a IEEE

^b Department of Earth and Environmental Sciences   (United States)

^c CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT COLLECTORS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; GAIN MEASUREMENT; OHMIC CONTACTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

CURRENT GAIN; MAXIMUM OSCILLATION FREQUENCY; MICROWAVE MEASUREMENTS; REDUCED BASE COLLECTOR CAPACITANCE; SELECTIVE BURIED SUB COLLECTOR; TWO GROWTH STEPS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030291121     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.541771     Document Type: Article

References (9)

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