A high-frequency GaInP/GaAs heterojunction bipolar transistor with reduced base-collector capacitance using a selective buried sub-collector

IEEE Electron Device Letters

Volumn 17, Issue 11, 1996, Pages 531-533

  Yang, Yue Fei ^a,b   Hsu, Chung Chi ^c   Yang, Edward S ^a,b   Ou, Hai Jiang ^b  

^a IEEE

^b Fu Foundation School of Engineering and Applied Science   (United States)

^c CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT COLLECTORS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; GAIN MEASUREMENT; OHMIC CONTACTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

CURRENT GAIN; MAXIMUM OSCILLATION FREQUENCY; MICROWAVE MEASUREMENTS; REDUCED BASE COLLECTOR CAPACITANCE; SELECTIVE BURIED SUB COLLECTOR; TWO GROWTH STEPS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030291121     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.541771     Document Type: Article

References (9)

1. O. Nakajima, K. Nagata, Y. Yamuchi, H. Ito, and T. Ishibashi, "Improvement in AIGAs/GaAs HBT power gains with buried protonimplemented layer," Electron Lett., vol. 22, pp. 1317-1318, 1986.
2. [2| P. M. Asbeck, D. L. Miller, R. J. Anderson, and F. H. Eisen, "GaAs/AIGaAs heterojunction bipolar transistors with buried oxygen-implanted isolation layers," IEEE Electron Device Lett., vol. 5, pp. 310-312, 1984.
3. M. C. Ho, R. A. Johnson, W. J. Ho, M. F. Chang, and P. M. Asbeck, "High-performance low-base collector capacitance AIGaAs/GaAs heterojunction bipolar transistors fabricated by deep ion implantation," IEEE Electron Device Lett., vol. 16, pp. 51-513, 1995.
4. D. W. Shaw, "Lacalized GaAs etching with acidic hydrogen peroxide solutions," J. Electrochem. Soc., vol. 128, p. 874-880, 1981.
5. Y. F. Yang, C. C. Hsu, E. S. Yang, and Y. K. Chen, "Comparison of GaInP/GaAs heterostructure-emitter bipolar transistors and heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 42, pp. 1210-1215, 1995.
6. Y. F. Yang, C. C. Hsu, and E. S. Yang, "A high frequency and low noise C-doped GaInP/GaAs heterojunction bipolar transistor grown by MOCVD using TBA and TBA," Electron. Lett., vol. 32, pp. 689-691, 1996.
7. D. Pehkle and D. Pavlidis, "Evaluation of the factors determining HBT high-frequency perfomance by direct analysis of s-parameter data," IEEE Trans. Microwave Theory Tech., vol. 40, pp. 2367-2373, 1992.
8. P. F. Lindquist and W. M. Ford, "Semi-insulating GaAs substartes," in GaAs FET Principles and Technology, J. V. DiLorenzo and D. D. Khandelwal, Eds. Norwood, MA: Artech House, 1982, ch. 1.
9. R. J. Krantz, D. C. Mayer and W. L. Bloss, "The influence of Fermi-level pinning at the GaAs substrate on HEMT threshold voltage," Solid-State Electron., vol. 33, pp. 1189-1195, 1990.