Influence of sulfur on the In/GaAs(100) interface formation

Applied Surface Science

Volumn 142, Issue 1, 1999, Pages 28-32

  Hohenecker, St ^a   Kampen, T U ^a   Werninghaus, T ^a   Zahn, D R T ^a   Braun, W ^b  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ANNEALING; BAND STRUCTURE; CHEMICAL MODIFICATION; ELECTRON ENERGY LEVELS; FERMI LEVEL; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; SULFUR; SURFACE TREATMENT; X RAY SPECTROSCOPY;

CHALCOGEN MODIFICATION; CONDUCTION BAND MINIMUM; HIGH RESOLUTION SOFT X RAY PHOTOEMISSION SPECTROSCOPY;

INTERFACES (MATERIALS);

EID: 0032686763     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00628-X     Document Type: Article

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