Wet oxidation of AlxGa1-xAs: Temporal evolution of composition and microstructure and the implications for metal-insulator-semiconductor applications

Applied Physics Letters

Volumn 70, Issue 18, 1997, Pages 2443-2445

  Ashby, Carol I H ^a   Sullivan, John P ^a   Newcomer, Paula P ^a   Missert, Nancy A ^a   Hou, Hong Q ^a   Hammons, B E ^a   Hafich, Michael J ^a   Baca, Albert G ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000573767     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118897     Document Type: Article

References (9)

1. J. M. Dallesasse, N. Holonyak, Jr., A. R. Sugg, T. A. Richard, and N. El-Zein, Appl. Phys. Lett. 57, 2844 (1990).
2. E. I. Chen, N. Holonyak, Jr., and S. A. Maranowski, Appl. Phys. Lett. 66, 2688 (1995).
3. G. P. Schwartz, B. Schwartz, D. DiStefano, G. J. Gualtieri, and J. E. Griffiths, Appl. Phys. Lett. 34, 205 (1979).
4. G. P. Schwartz, G. J. Gualtieri, J. E. Griffiths, C. D. Thurmond, and B. Schwartz, J. Electrochem. Soc. 127, 2488 (1980).
5. R. D. Twesten, D. M. Follstaedt, K. D. Choquette, and R. P. Schneider, Jr., Appl. Phys. Lett. 69, 19 (1996).
6. B. K. P. Scaife, Principles of Dielectrics (Clarendon, Oxford, 1989.)
7. M. Passlack, M. Hong, and J. P. Mannaerts, Appl. Phys. Lett. 68, 1099 (1996).
8. J. M. Woodall, P. D. Kirchner, J. F. Freeouf, D. T. McInturff, M. R. Melloch, and F. H. Pollak, Philos. Trans. R. Soc. London Ser. A 344, 521 (1993).
9. C. D. Thurmond, G. P. Schwartz, G. W. Kammlott, and B. Schwartz, J. Electrochem. Soc. 127, 1366 (1980).