Physics of degradation in GaAs-based heterojunction bipolar transistors

Microelectronics Reliability

Volumn 39, Issue 6-7, 1999, Pages 1033-1042

  Henderson, T ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL DEFECTS; DEGRADATION; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; STRESSES; WIRELESS TELECOMMUNICATION SYSTEMS;

EMITTER; SEMICONDUCTING GALLIUM INDIUM PHOSPHIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033143166     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00143-2     Document Type: Article

References (21)

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