High reliability InGaP/GaAs HBT

IEEE Electron Device Letters

Volumn 19, Issue 4, 1998, Pages 115-117

  Pan, N ^a,b   Elliott, J ^b   Knowles, M ^b   Vu, D P ^b   Kishimoto, K ^c   Twynam, J K ^c   Sato, H ^c   Fresina, M T ^d   Stillman, G E ^a,d  

^a IEEE   (United States)

^b KOPIN CORPORATION   (United States)

^c SHARP CORPORATION   (Japan)

^d UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC RESISTANCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVE CIRCUITS; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR GROWTH;

CHARGE RECOMBINATION; RELIABILITY TESTING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032050344     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.663532     Document Type: Article

References (7)

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2. W. L. Chen, T. S. Kim, H. F. Chau, and T. Henderson, "High performance InGaP/GaAs HBT with AlGaAs/InGaP emitter passivated ledges for reliable power applications," in Proc. Indium Phosphide and Rel. Mater., 1997, pp. 361-364.
3. C. Beaulieu, B. Beggs, J. Bennett, J. P. D. Cook, L. Hobbs, T. Lester, B. Oliver, and R. K. Surridge, "Degradation modes of GaAs HBT and circuits fabricated in a InGaP emitter technology," in Proc. GaAs Reliab. Workshop, 1996, pp. 11-14.
4. H. C. Kuo, J. M. Kuo, Y. C. Wang, C. H. Lin, H. Chen, and G. E. Stillman, "Determination of the band offset of InGaP/GaAs and AlInP/GaAs quantum wells by optical spectroscopy," J. Electron. Mater., vol. 26, pp. 944-948, Aug. 1997.
5. T. Henderson, D. Hill, W. Liu, D. Costa, H. F. Chau, T. S. Kim, and A. Khatibzadeh, "Characterization of bias stressed carbon doped GaAs/AlGaAs power HBT," in Proc. IEDM, 1994, pp. 187-190.
6. T. Nittono, N. Watanabe, H. Ito, H. Sugahara, K. Nagata, and O. Nakajima, "Carbon and indium co-doping in GaAs for reliable AlGaAs/GaAs HBT," Jpn. J. Appl. Phys., vol. 33, pp. 6129-6135, 1994.
7. A. Gupta, F. Ali, D. Dawson, and P. Smith, "Degradation of a Ku-band GaAs/AlGaAs power HBT MIMIC under RF stress," IEEE Microwave Guided Wave Lett., vol. 6, pp. 43-45, Jan. 1996.