Summary of Schottky barrier height data on epitaxially grown n- and p-GaAs

Thin Solid Films

Volumn 325, Issue 1-2, 1998, Pages 181-186

  Myburg, G ^a   Auret, F D ^a   Meyer, W E ^a   Louw, C W ^b   Van Staden, M J ^b  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b DSI CSIR Nanotechnology Innovation Centre   (South Africa)

Author keywords

Contacts; Electrical properties and measurements; Metallization; Schottky barrier

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON GUNS; ELECTRONIC DENSITY OF STATES; EPITAXIAL GROWTH; FERMI LEVEL; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE;

MIEDEMA ELECTRONEGATIVITIES; PAULING ELECTRONEGATIVITIES; SCHOTTKY MOTT THEORY;

SCHOTTKY BARRIER DIODES;

EID: 0032115488     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00428-3     Document Type: Article

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