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Volumn 410, Issue 1, 2013, Pages 85-89

The improved resistive switching properties of TaOx-based RRAM devices by using WNx as bottom electrode

Author keywords

Filamentary conduction; Non volatile memory; Resistive memory (RRAM); Resistive switching; Tantalum oxide (TaOx); Tungsten nitride

Indexed keywords

FILAMENTARY CONDUCTION; NON-VOLATILE MEMORIES; RESISTIVE MEMORIES; RESISTIVE SWITCHING; TUNGSTEN NITRIDE;

DATA STORAGE EQUIPMENT; NITRIDES; PHOTOELECTRONS; PLATINUM; SWITCHING SYSTEMS; TANTALUM OXIDES; TUNGSTEN; TUNGSTEN COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

RANDOM ACCESS STORAGE;

EID: 84872334788 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2012.10.020 Document Type: Article

Times cited : (21)

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