On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers

IEEE Transactions on Electron Devices

Volumn 45, Issue 11, 1998, Pages 2329-2334

  Crupi, Felice ^b   Degraeve, Robin ^c   Groeseneken, Guido ^a,c   Nigam, Tanya ^c   Macs, Herman E ^a,c  

^a IEEE

^b UNIVERSITY OF PISA   (Italy)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON EMISSION; ELECTRON TUNNELING; MATHEMATICAL MODELS; MOS CAPACITORS; MOSFET DEVICES; SUBSTRATES;

SOFT BREAKDOWN (SBD); ULTRATHIN OXIDE LAYERS;

ELECTRIC BREAKDOWN OF SOLIDS;

EID: 0032204912     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.726650     Document Type: Article

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