A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages

  Su, Chun Jung ^a   Su, Tuan Kai ^a   Tsai, Tzu I ^a   Lin, Horng Chih ^a,b   Huang, Tiao Yuan ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

JL; NW; Poly Si; SONOS; TFT

Indexed keywords

CARRIER CONCENTRATION; NANOWIRES; NONVOLATILE STORAGE; POLYSILICON; SILICON OXIDES; THIN FILM TRANSISTORS;

FABRICATION PROCESS; MANUFACTURING PROCESS; MEMORY APPLICATIONS; NONVOLATILE MEMORY DEVICES; SILICON NON-VOLATILE MEMORY; SONOS; SOURCE/DRAIN REGIONS; ULTRAHIGH DENSITY;

POLYCRYSTALLINE MATERIALS;

EID: 84863282948     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-162     Document Type: Article

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