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Volumn 8, Issue 3, 2016, Pages

Mobility enhancement of strained Si transistors by transfer printing on plastic substrates

Author keywords

[No Author keywords available]

Indexed keywords

COST ENGINEERING; FLEXIBLE ELECTRONICS; INTERFACES (MATERIALS); SILICON; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; STRAINED SILICON; TENSILE STRAIN; THIN FILM TRANSISTORS;

EID: 84979642682     PISSN: 18844049     EISSN: 18844057     Source Type: Journal    
DOI: 10.1038/am.2016.31     Document Type: Article
Times cited : (15)

References (40)
  • 2
    • 10844253101 scopus 로고    scopus 로고
    • Silicon device scaling to the sub-10-nm regime
    • Ieong, M., Doris, B., Kedzierski, J., Rim, K. & Yang, M. Silicon device scaling to the sub-10-nm regime. Science 306, 2057-2060 (2004).
    • (2004) Science , vol.306 , pp. 2057-2060
    • Ieong, M.1    Doris, B.2    Kedzierski, J.3    Rim, K.4    Yang, M.5
  • 3
    • 0039436914 scopus 로고    scopus 로고
    • 2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
    • 2 and Si-O-N gate dielectric layers for silicon microelectronics: understanding the processing, structure, and physical and electrical limits. J. Appl. Phys. 90, 2057-2121 (2001).
    • (2001) J. Appl. Phys. , vol.90 , pp. 2057-2121
    • Green, M.L.1    Gusev, E.P.2    Degraeve, R.3    Garfunkel, E.L.4
  • 4
    • 31044455312 scopus 로고    scopus 로고
    • High dielectric constant gate oxides for metal oxide Si transistors
    • Robertson, J. High dielectric constant gate oxides for metal oxide Si transistors. Rep. Prog. Phys. 69, 327-396 (2006).
    • (2006) Rep. Prog. Phys. , vol.69 , pp. 327-396
    • Robertson, J.1
  • 6
    • 0035860451 scopus 로고    scopus 로고
    • Limits on silicon nanoelectronics for terascale integration
    • Meindl, J. D., Chen, Q. & Davis, J. A. Limits on silicon nanoelectronics for terascale integration. Science 293, 2044-2049 (2001).
    • (2001) Science , vol.293 , pp. 2044-2049
    • Meindl, J.D.1    Chen, Q.2    Davis, J.A.3
  • 7
    • 0034452586 scopus 로고    scopus 로고
    • Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design
    • Ito, S. Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design. Tech. Dig. Int. Electron Devices Meet. 247-250 (2000).
    • (2000) Tech. Dig. Int. Electron Devices Meet. , pp. 247-250
    • Ito, S.1
  • 9
    • 40949121075 scopus 로고    scopus 로고
    • Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance
    • Ang, K.-W., Lin, J., Tung, C.-H., Balasubramanian, N., Samudra, G. S. & Yeo, Y.-C. Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance. IEEE Trans. Electron Devices. 55, 850-857 (2008).
    • (2008) IEEE Trans. Electron Devices. , vol.55 , pp. 850-857
    • Ang, K.-W.1    Lin, J.2    Tung, C.-H.3    Balasubramanian, N.4    Samudra, G.S.5    Yeo, Y.-C.6
  • 11
    • 0001038893 scopus 로고    scopus 로고
    • Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
    • Fischetti, M. V. & Laux, S. E. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys. J. Appl. Phys. 80, 2234-2252 (1996).
    • (1996) J. Appl. Phys. , vol.80 , pp. 2234-2252
    • Fischetti, M.V.1    Laux, S.E.2
  • 12
    • 19944433396 scopus 로고    scopus 로고
    • SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
    • Lee, M. L., Fitzgerald, E. A., Bulsara, M. T., Currie, M. T. & Lochtefeld, A. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors. J. Appl. Phys. 97, 011101 (2005).
    • (2005) J. Appl. Phys. , vol.97 , pp. 011101
    • Lee, M.L.1    Fitzgerald, E.A.2    Bulsara, M.T.3    Currie, M.T.4    Si Strained, L.A.5
  • 14
    • 33947630254 scopus 로고    scopus 로고
    • Elastically strain-sharing nanomembranes: Flexible and transferable strained silicon and silicon-germanium alloys
    • Scott, S. A. & Lagally, M. G. Elastically strain-sharing nanomembranes: flexible and transferable strained silicon and silicon-germanium alloys. J. Phys. D Appl. Phys. 40, R75-R92 (2007).
    • (2007) J. Phys. D Appl. Phys. , vol.40 , pp. R75-R92
    • Scott, S.A.1    Lagally, M.G.2
  • 15
    • 33746211148 scopus 로고    scopus 로고
    • High-speed strained-single-crystal-silicon thin-film transistors on flexible polymers
    • Yuan, H.-C, Ma, Z., Roberts, M. M., Savage, D. E. & Lagally, M. G. High-speed strained-single-crystal-silicon thin-film transistors on flexible polymers. J. Appl. Phys. 100, 013708 (2006).
    • (2006) J. Appl. Phys. , vol.100 , pp. 013708
    • Yuan, H.-C.1    Ma, Z.2    Roberts, M.M.3    Savage, D.E.4    Lagally, M.G.5
  • 16
    • 78649654125 scopus 로고    scopus 로고
    • 12-GHz thin-film transistors on transferrable silicon nanomembranes for high-performance flexible electronics
    • Sun, L., Qin, G., Seo, J. H., Celler, G. K., Zhou, W. & Ma, Z. 12-GHz thin-film transistors on transferrable silicon nanomembranes for high-performance flexible electronics. Small 6, 2553-2557 (2010).
    • (2010) Small , vol.6 , pp. 2553-2557
    • Sun, L.1    Qin, G.2    Seo, J.H.3    Celler, G.K.4    Zhou, W.5    Ma, Z.6
  • 18
    • 0030125305 scopus 로고    scopus 로고
    • The effect of strain on the formation of dislocations at the SiGe/Si interface
    • LeGoues, F. K. The effect of strain on the formation of dislocations at the SiGe/Si interface. MRS Bull 21, 38-44 (1996).
    • (1996) MRS Bull , vol.21 , pp. 38-44
    • LeGoues, F.K.1
  • 20
    • 0035473542 scopus 로고    scopus 로고
    • Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy
    • Koester, S. J., Rim, K., Chu, J. O., Mooney, P. M. & Ott, J. A. Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy. Appl. Phys. Lett. 79, 2148-2150 (2001).
    • (2001) Appl. Phys. Lett. , vol.79 , pp. 2148-2150
    • Koester, S.J.1    Rim, K.2    Chu, J.O.3    Mooney, P.M.4    Ott, J.A.5
  • 21
    • 0035307407 scopus 로고    scopus 로고
    • Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal-melt interface using in situ monitoring system
    • Azuma, Y., Usami, N., Ujihara, T., Sazaki, G., Murakami, Y., Miyashita, S., Fujiwara, K. & Nakajima, K. Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal-melt interface using in situ monitoring system. J. Cryst. Growth 224, 204-211 (2001).
    • (2001) J. Cryst. Growth , vol.224 , pp. 204-211
    • Azuma, Y.1    Usami, N.2    Ujihara, T.3    Sazaki, G.4    Murakami, Y.5    Miyashita, S.6    Fujiwara, K.7    Nakajima, K.8
  • 22
    • 21544464097 scopus 로고
    • Stress in thermal SiO2 during growth
    • EerNisse, E. P. Stress in thermal SiO2 during growth. Appl. Phys. Lett. 35, 8-10 (1979).
    • (1979) Appl. Phys. Lett. , vol.35 , pp. 8-10
    • EerNisse, E.P.1
  • 23
    • 77953298736 scopus 로고    scopus 로고
    • Compressive stress effect on the radial elastic modulus of oxidized Si nanowires
    • Stan, G., Krylyuk, S., Davydov, A. V. & Cook, R. F. Compressive stress effect on the radial elastic modulus of oxidized Si nanowires. Nano Lett. 10, 2031-2037 (2010).
    • (2010) Nano Lett. , vol.10 , pp. 2031-2037
    • Stan, G.1    Krylyuk, S.2    Davydov, A.V.3    Cook, R.F.4
  • 26
  • 27
    • 25444532749 scopus 로고    scopus 로고
    • Mechanical stress in thin film microstrures on silicon substrate
    • Resnik, D., Aljancic, U., Vrtacnik, D., Moek, M. & Amon, S. Mechanical stress in thin film microstrures on silicon substrate. Vacuum 80, 236-240 (2005).
    • (2005) Vacuum , vol.80 , pp. 236-240
    • Resnik, D.1    Aljancic, U.2    Vrtacnik, D.3    Moek, M.4    Amon, S.5
  • 29
    • 0037174893 scopus 로고    scopus 로고
    • Determination of growth-induced strain and thermo-elastic properties of coatings by curvature measurements
    • Gunnars, J. & Wiklund, U. Determination of growth-induced strain and thermo-elastic properties of coatings by curvature measurements. Mater. Sci. Eng. 336, 7-21 (2002).
    • (2002) Mater. Sci. Eng. , vol.336 , pp. 7-21
    • Gunnars, J.1    Wiklund, U.2
  • 30
    • 0030081591 scopus 로고    scopus 로고
    • Micro-Raman spectroscopy to study local mechanical stress in silicocn integrated circuits
    • Wolf, I. D. Micro-Raman spectroscopy to study local mechanical stress in silicocn integrated circuits. Semicond. Sci. Technol. 11, 139-154 (1996).
    • (1996) Semicond. Sci. Technol. , vol.11 , pp. 139-154
    • Wolf, I.D.1
  • 32
    • 19944371198 scopus 로고    scopus 로고
    • Stress controlled gas-barrier oxide coatings on semi-crystalline polymers
    • Rochat, G., Leterrier, Y., Fayet, P. & Månson, J.-A. E. Stress controlled gas-barrier oxide coatings on semi-crystalline polymers. Thin Solid Films 484, 94-99 (2005).
    • (2005) Thin Solid Films , vol.484 , pp. 94-99
    • Rochat, G.1    Leterrier, Y.2    Fayet, P.3    Månson, J.-A.E.4
  • 33
    • 34249948925 scopus 로고    scopus 로고
    • Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors
    • Sun, Y., Thompson, S. E. & Nishida, T. Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors. J. Appl. Phys. 101, 104503 (2007).
    • (2007) J. Appl. Phys. , vol.101 , pp. 104503
    • Sun, Y.1    Thompson, S.E.2    Nishida, T.3
  • 34
    • 58149247939 scopus 로고    scopus 로고
    • First-principles study of electronic properties of biaxially strained silicon: Effects on charge carrier mobility
    • Yu, D., Zhang, Y. & Liu, F. First-principles study of electronic properties of biaxially strained silicon: effects on charge carrier mobility. Phys. Rev. B 78, 245204 (2008).
    • (2008) Phys. Rev. B , vol.78 , pp. 245204
    • Yu, D.1    Zhang, Y.2    Liu, F.3
  • 36
    • 84877741536 scopus 로고    scopus 로고
    • Deterministic assembly of releasable single crystal silicon-metal oxide field-effect devices formed from bulk wafers
    • Kim, T.-i., Jung, Y. H., Chung, H.-J., Yu, K. J., Ahmed, N., Corcoran, C. J., Park, J. S., Jin, S. H. & Rogers, J. A. Deterministic assembly of releasable single crystal silicon-metal oxide field-effect devices formed from bulk wafers. Appl. Phys. Lett. 102, 182104 (2013).
    • (2013) Appl. Phys. Lett. , vol.102 , pp. 182104
    • Kim, T.-I.1    Jung, Y.H.2    Chung, H.-J.3    Yu, K.J.4    Ahmed, N.5    Corcoran, C.J.6    Park, J.S.7    Jin, S.H.8    Rogers, J.A.9
  • 37
    • 80051778815 scopus 로고    scopus 로고
    • Fabrication of releasable single-crystal silicon-metal oxide field-effect devices and their deterministic assembly on foreign substrates
    • Chung, H.-J., Kim, T.-i, Kim, H.-S., Wells, S. A., Jo, S., Ahmed, N., Jung, Y. H., Won, S. M., Bower, C. A. & Rogers, J. A. Fabrication of releasable single-crystal silicon-metal oxide field-effect devices and their deterministic assembly on foreign substrates. Adv. Funct. Mater. 21, 3029-3036 (2011).
    • (2011) Adv. Funct. Mater. , vol.21 , pp. 3029-3036
    • Chung, H.-J.1    Kim, T.-I.2    Kim, H.-S.3    Wells, S.A.4    Jo, S.5    Ahmed, N.6    Jung, Y.H.7    Won, S.M.8    Bower, C.A.9    Rogers, J.A.10
  • 38
    • 0017005812 scopus 로고
    • Internal stresses and activation volumes from the stress relaxation behavior of polyethylene at low deformations
    • Kubat, J., Rigdahl, M. & Selden, R. Internal stresses and activation volumes from the stress relaxation behavior of polyethylene at low deformations. J. Appl. Polym. Sci. 20, 2799-2809 (1976).
    • (1976) J. Appl. Polym. Sci. , vol.20 , pp. 2799-2809
    • Kubat, J.1    Rigdahl, M.2    Selden, R.3
  • 39
    • 80051532077 scopus 로고    scopus 로고
    • Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes
    • Chen, F., Euaruksakul, C., Liu, Z., Himpsel, F. J., Liu, F. & Lagally, M. G. Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes. J. Phys. D Appl. Phys. 44, 325107 (2011).
    • (2011) J. Phys. D Appl. Phys. , vol.44 , pp. 325107
    • Chen, F.1    Euaruksakul, C.2    Liu, Z.3    Himpsel, F.J.4    Liu, F.5    Lagally, M.G.6
  • 40
    • 58149247939 scopus 로고    scopus 로고
    • First-principles study of electronic properties of biaxially strained silicon: Effects on charge carrier mobility
    • Yu, D., Zhang, Y. & Liu, F. First-principles study of electronic properties of biaxially strained silicon: Effects on charge carrier mobility. Phys. Rev. B 78, 245204 (2008).
    • (2008) Phys. Rev. B , vol.78 , pp. 245204
    • Yu, D.1    Zhang, Y.2    Liu, F.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.