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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 11, 2005, Pages 7922-7924

Determination of Raman phonon strain shift coefficient of strained silicon and strained SiGe

(9) Wong, L H a,b Wong, C C a Liu, J P b Sohn, D K b Chan, L b Hsia, L C b Zang, H c Ni, Z H c Shen, Z X c

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b CHARTERED SEMICONDUCTOR MANUFACTURING LTD (Singapore)

c NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

Measurement; Phonon strain shift coefficient; Raman; Strain; Strained Si; Strained SiGe

Indexed keywords

CONCENTRATION (PROCESS); PHONONS; SILICON; SILICON COMPOUNDS; STRAIN MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

PHONON STRAIN SHIFT COEFFICIENT; STRAINED SI; STRAINED SIGE;

RAMAN SPECTROSCOPY;

EID: 31544475666 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.7922 Document Type: Article

Times cited : (53)

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