Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Journal of Physics D: Applied Physics

Volumn 44, Issue 32, 2011, Pages

  Chen, Feng ^a,b   Euaruksakul, Chanan ^b,d   Liu, Zheng ^c,e   Himpsel, F J ^b   Liu, Feng ^c   Lagally, Max G ^b  

^a XI'AN JIAOTONG UNIVERSITY   (China)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

^c UNIVERSITY OF UTAH   (United States)

^d SYNCHROTRON LIGHT RESEARCH INSTITUTE   (Thailand)

^e TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED STRAIN; COMMERCIAL APPLICATIONS; CONDUCTION-BAND STATE; DEFORMATION POTENTIAL; HIGH STRESS; L-VALLEY; MOBILITY ENHANCEMENT; NANOMEMBRANES; STRAIN CHANGE; STRAIN TENSOR; STRAIN-INDUCED CHANGE; STRAINED-SI; THEORETICAL PREDICTION; UNIAXIAL DEFORMATION;

ABSORPTION SPECTROSCOPY; CONDUCTION BANDS; DEFORMATION; ELECTRON MOBILITY; LANDFORMS; NANOSTRUCTURES;

STRAIN;

EID: 80051532077     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/32/325107     Document Type: Article

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