Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy

Applied Physics Letters

Volumn 79, Issue 14, 2001, Pages 2148-2150

  Koester, S J ^a   Rim, K ^a   Chu, J O ^a   Mooney, P M ^a   Ott, J A ^a   Hargrove, M A ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035473542     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1405151     Document Type: Article

References (11)

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