Source/drain germanium condensation for P-channel strained ultra-thin body transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 493-496

  Chui, King Jien ^a   Ang, Kah Wee ^a   Madan, Anuj ^a   Wang, Huiqi ^a   Tung, Chih Hang ^b   Wong, Lai Yin ^b   Wang, Yihua ^b   Choy, Siew Fong ^b   Balasubramanian, N ^b   Li, Ming Fu ^a   Samudra, Ganesh ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GERMANIUM; MOSFET DEVICES; SILICON; SILICON ON INSULATOR TECHNOLOGY;

DRIVE CURRENT; THERMAL BUDGET; TRANSISTOR CHANNEL; ULTRA-THIN-BODY (UTB);

TRANSISTORS;

EID: 33847757117     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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3. Y.-C. Yeo et al., "Finite-element study of strain distribution in transistor with silicon-germanium source and drain regions," Appl. Phys. Lett., vol. 86, 023103, 2005.
4. C.-H. Ge et al., "Process-strained silicon (PSS) CMOS Technology featuring 3D strain engineering," IEDM Tech. Dig., pp. 73, 2003.
5. T. Tezuka et al., "High-performance strained Si-on-insulator MOSFETs by novel fabrication processes utilizing Ge-condensation technique," Symp. VLSI Tech., pp. 96, 2002.
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7. K.-W. Ang et al., "Lattice strain analysis of transistor structures with SiGe and SiC source/drain Stressors," Appl. Phys. Lett., vol. 86, 093102, 2005.
8. M. Spadafora et al., "Oxidation rate enhancement of SiGe epitaxial films oxidized in dry ambient," Appl. Phys. Lett., vol. 83, pp. 3714, 2003.