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Advanced Functional Materials

Volumn 26, Issue 23, 2016, Pages 4223-4230

Carrier Type Control of WSe2 Field-Effect Transistors by Thickness Modulation and MoO3 Layer Doping

(7) Zhou, Changjian a Zhao, Yuda a,b Raju, Salahuddin c Wang, Yi a Lin, Ziyuan a Chan, Mansun c Chai, Yang a,b

a HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

b The Hong Kong Polytechnic University (Hong Kong)

c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

Author keywords

2D materials; carrier type; doping; field effect transistor

Indexed keywords

COMPUTATION THEORY; DOPING (ADDITIVES); HOLE MOBILITY; INTEGRATED CIRCUITS; MOLYBDENUM OXIDE; PROCESSING; SELENIUM COMPOUNDS; SEMICONDUCTOR DOPING;

AMBIPOLAR CHARACTERISTICS; CARRIER TYPE; COMPLEMENTARY LOGIC; FIELD EFFECT TRANSISTOR (FETS); FUNCTIONAL DEVICES; ORDERS OF MAGNITUDE; PROCESSING METHOD; STATE OF THE ART;

FIELD EFFECT TRANSISTORS;

EID: 84963811376 PISSN: 1616301X EISSN: 16163028 Source Type: Journal
DOI: 10.1002/adfm.201600292 Document Type: Article

Times cited : (197)

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