Interfacial nondegenerate doping of MoS2 and other two-dimensional semiconductors

ACS Nano

Volumn 9, Issue 3, 2015, Pages 2227-2230

  Behura, Sanjay ^a   Berry, Vikas ^a  

^a University of Illinois at Chicago   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

CONTINUUM STRUCTURES; DEVICE DESIGN; DOPING TECHNIQUES; HIGH DEFECT DENSITIES; QUANTUM CAPACITANCE; SENSITIVE ELECTRONICS; SPATIAL PATTERNING; TWO-DIMENSIONAL SEMICONDUCTORS;

SEMICONDUCTOR DOPING;

DISULFIDE; MOLYBDENUM; MOLYBDENUM DISULFIDE;

CHEMICAL STRUCTURE; CHEMISTRY; CONFORMATION; SEMICONDUCTOR;

DISULFIDES; MODELS, MOLECULAR; MOLECULAR CONFORMATION; MOLYBDENUM; SEMICONDUCTORS;

EID: 84925596614     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b01442     Document Type: Review

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