Infrared light gated MoS2 field effect transistor

Optics Express

Volumn 23, Issue 25, 2015, Pages 31908-31914

  Fang, Huajing ^a,b   Lin, Ziyuan ^a   Wang, Xinsheng ^a   Tang, Chun Yin ^a   Chen, Yan ^a   Zhang, Fan ^a   Chai, Yang ^a   Li, Qiang ^b   Yan, Qingfeng ^b   Chan, H L W ^a   Dai, Ji Yan ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; LEAD; MONOLAYERS; OPTOELECTRONIC DEVICES; PHOTOTRANSISTORS; RECONFIGURABLE HARDWARE; SINGLE CRYSTALS; TRANSISTORS;

FERROELECTRIC SINGLE CRYSTALS; INFRARED ILLUMINATION; IR PHOTODETECTORS; MOLYBDENUM DISULFIDE; OPTICAL AND ELECTRICAL PROPERTIES; PMN-PT SINGLE CRYSTAL; PYROELECTRIC EFFECT; WAVELENGTH OF LIGHT;

MOLYBDENUM COMPOUNDS;

EID: 84959343358     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.23.031908     Document Type: Article

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