High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors

ACS Nano

Volumn 9, Issue 10, 2015, Pages 10402-10410

  Movva, Hema C P ^a   Rai, Amritesh ^a   Kang, Sangwoo ^a   Kim, Kyounghwan ^a   Fallahazad, Babak ^a   Taniguchi, Takashi ^b   Watanabe, Kenji ^b   Tutuc, Emanuel ^a   Banerjee, Sanjay K ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

field effect transistor (FET); hole mobility; metal insulator transition (MIT); transition metal dichalcogenide (TMD); tungsten diselenide (WSe2)

Indexed keywords

GATE DIELECTRICS; HOLE MOBILITY; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; METALS; SELENIUM COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; TEMPERATURE DISTRIBUTION; TRANSITION METALS; TUNGSTEN;

CRYOGENIC TEMPERATURES; FIELD EFFECT TRANSISTOR (FETS); HEXAGONAL BORON NITRIDE; NEGATIVE DIFFERENTIAL RESISTANCES; TEMPERATURE DEPENDENCE; TRANSITION METAL DICHALCOGENIDES; TRANSPORT MEASUREMENTS; TUNGSTEN DISELENIDE;

FIELD EFFECT TRANSISTORS;

EID: 84945943025     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b04611     Document Type: Article

References (45)

1. Geim, A. K.; Grigorieva, I. V. Van der Waals Heterostructures Nature 2013, 499, 419-425 10.1038/nature12385
2. Chhowalla, M.; Shin, H. S.; Eda, G.; Li, L.-J.; Loh, K. P.; Zhang, H. The Chemistry of Two-Dimensional Layered Transition Metal Dichalcogenide Nanosheets Nat. Chem. 2013, 5, 263-275 10.1038/nchem.1589
3. Jariwala, D.; Sangwan, V. K.; Lauhon, L. J.; Marks, T. J.; Hersam, M. C. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides. ACS Nano 2014, 8, 1102 10.1021/nn500064s
4. 2 Transistors Nat. Nanotechnol. 2011, 6, 147-150 10.1038/nnano.2010.279
5. 2 Transistors with Scandium Contacts Nano Lett. 2013, 13, 100-105 10.1021/nl303583v
6. 2 Layers. Appl. Phys. Lett. 2012, 101. 223104 10.1063/1.4768218
7. 5 Room Temperature Modulation and Ambipolar Behavior. Appl. Phys. Lett. 2012, 101. 013107 10.1063/1.4732522
8. 2 p-FETs with Chemically Doped Contacts Nano Lett. 2012, 12, 3788-3792 10.1021/nl301702r
9. 2 Field Effect Transistors Nano Lett. 2013, 13, 1983-1990 10.1021/nl304777e
10. 2 Field Effect Transistors with Enhanced Ambipolar Characteristics. Appl. Phys. Lett. 2013, 103. 103501 10.1063/1.4820408
11. Podzorov, V.; Gershenson, M. E.; Kloc, C.; Zeis, R.; Bucher, E. High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides Appl. Phys. Lett. 2004, 84, 3301-3303 10.1063/1.1723695
12. 2 p-n Junctions Nat. Nanotechnol. 2014, 9, 268-272 10.1038/nnano.2014.26
13. 2 Transistors Science 2014, 344, 1489-1492 10.1126/science.1250140
14. 2 and Other Group-VI Dichalcogenides Phys. Rev. Lett. 2012, 108, 196802 10.1103/PhysRevLett.108.196802
15. Banerjee, S. K.; Register, L.; Tutuc, E.; Reddy, D.; MacDonald, A. Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic Device IEEE Electron Device Lett. 2009, 30, 158-160 10.1109/LED.2008.2009362
16. Fogler, M. M.; Butov, L. V.; Novoselov, K. S. High-Temperature Superfluidity with Indirect Excitons in van der Waals Heterostructures. Nat. Commun. 2014, 5. 10.1038/ncomms5555
17. 2 Nat. Mater. 2013, 12, 815-820 10.1038/nmat3687
18. 2 Nano Lett. 2013, 13, 4212-4216 10.1021/nl401916s
19. 2 Transistors. Appl. Phys. Lett. 2013, 102. 173107 10.1063/1.4803920
20. Chen, X.; Wu, Z.; Xu, S.; Wang, L.; Huang, R.; Han, Y.; Ye, W.; Xiong, W.; Han, T.; Long, G.; et al.et al., Probing the Electron States and Metal-Insulator Transition Mechanisms in Molybdenum Disulphide Vertical Heterostructures. Nat. Commun. 2014, 6.
21. 2 Devices Fabricated by Pick-up of Prepatterned hBN Nano Lett. 2015, 15, 1898-1903 10.1021/nl504750f
22. 2 Field-Effect Transistors. Sci. Rep. 2015, 5. 8979 10.1038/srep08979
23. 2 ACS Nano 2014, 8, 7180-7185 10.1021/nn5021538
24. 2 ACS Nano 2014, 8, 5911-5920 10.1021/nn501013c
25. Li, L.; Yu, Y.; Ye, G. J.; Ge, Q.; Ou, X.; Wu, H.; Feng, D.; Chen, X. H.; Zhang, Y. Black Phosphorus Field-Effect Transistors Nat. Nanotechnol. 2014, 9, 372-377 10.1038/nnano.2014.35
26. x Contacts. Nano Lett. 2014, 14. 1337 10.1021/nl4043505
27. 2 Using a van der Waals Heterostructure Device Platform Nat. Nanotechnol. 2015, 10, 534-540 10.1038/nnano.2015.70
28. 2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts Nano Lett. 2014, 14, 3594-3601 10.1021/nl501275p
29. 2-Graphene Heterostructures ACS Nano 2015, 9, 4527-4532 10.1021/acsnano.5b01114
30. Wang, L.; Meric, I.; Huang, P. Y.; Gao, Q.; Gao, Y.; Tran, H.; Taniguchi, T.; Watanabe, K.; Campos, L. M.; Muller, D. A. et al.et al. One-Dimensional Electrical Contact to a Two-Dimensional Material Science 2013, 342, 614-617 10.1126/science.1244358
31. Singh-Miller, N. E.; Marzari, N. Surface Energies, Work Functions, and Surface Relaxations of Low-Index Metallic Surfaces from First Principles. Phys. Rev. B: Condens. Matter Mater. Phys. 2009, 80. 10.1103/PhysRevB.80.235407
32. 2 ACS Nano 2013, 7, 11350-11357 10.1021/nn4052138
33. 2 van der Waals Tunnel Diodes and Transistors ACS Nano 2015, 9, 2071-2079 10.1021/nn507278b
34. Streetman, B.; Banerjee, S. Solid State Electronic Devices; Prentice Hall, 2005.
35. 4 Substrates. Appl. Phys. Lett. 2015, 106. 062101 10.1063/1.4907885
36. 2 Transistors Adv. Mater. 2015, 27, 1547-1552 10.1002/adma.201405068
37. 2 Transistors Device Research Conference (DRC), 2014 72nd Annual 2014, 183-184 10.1109/DRC.2014.6872358
38. Das Sarma, S.; Hwang, E. H. Two-Dimensional Metal-Insulator Transition as a Strong Localization Induced Crossover Phenomenon Phys. Rev. B: Condens. Matter Mater. Phys. 2014, 89, 235423 10.1103/PhysRevB.89.235423
39. Das Sarma, S.; Hwang, E. H.; Li, Q. Two-Dimensional Metal-Insulator Transition as a Potential Fluctuation Driven Semiclassical Transport Phenomenon Phys. Rev. B: Condens. Matter Mater. Phys. 2013, 88, 155310 10.1103/PhysRevB.88.155310
40. Abrahams, E.; Anderson, P. W.; Licciardello, D. C.; Ramakrishnan, T. V. Scaling Theory of Localization: Absence of Quantum Diffusion in Two Dimensions Phys. Rev. Lett. 1979, 42, 673-676 10.1103/PhysRevLett.42.673
41. 2 From First Principles Phys. Rev. B: Condens. Matter Mater. Phys. 2012, 85, 115317 10.1103/PhysRevB.85.115317
42. 2 from First Principles Phys. Rev. B: Condens. Matter Mater. Phys. 2013, 87, 235312 10.1103/PhysRevB.87.235312
43. 2 Grown by Chemical Vapor Deposition Nano Lett. 2014, 14, 1909-1913 10.1021/nl4046922
44. Ma, N.; Jena, D. Charge Scattering and Mobility in Atomically Thin Semiconductors Phys. Rev. X 2014, 4, 011043 10.1103/PhysRevX.4.011043
45. 2/BN Heterostructure and its Quantum Oscillations. arXiv preprint arXiv: 1503.08427, 2015.