Device perspective for black phosphorus field-effect transistors: Contact resistance, ambipolar behavior, and scaling

ACS Nano

Volumn 8, Issue 10, 2014, Pages 10035-10042

  Du, Yuchen ^a   Liu, Han ^a   Deng, Yexin ^a   Ye, Peide D ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

black phosphorus; contact resistance; phosphorene; Schottky barrier transistor; short channel effect

Indexed keywords

COMPUTER CIRCUITS; CONTACT RESISTANCE; DRAIN CURRENT; GATES (TRANSISTOR); LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; OPTICAL PROPERTIES; PHOSPHORUS; SCHOTTKY BARRIER DIODES; TRANSISTORS; TRANSITION METALS; ULTRATHIN FILMS;

AMBIPOLAR CHARACTERISTICS; FIELD EFFECT TRANSISTOR (FETS); PHOSPHORENE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIER TRANSISTORS; SHORT-CHANNEL EFFECT; TRANSISTOR CHARACTERISTICS; TRANSITION METAL DICHALCOGENIDES;

BLACK PHOSPHORUS;

EID: 84908431378     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn502553m     Document Type: Article

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