Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Charge transfer correction term for the electron affinity rule

Journal of Applied Physics

Volumn 85, Issue 5, 1999, Pages 2732-2753

  Schlaf, R ^a,b   Lang, O ^a   Pettenkofer, C ^a   Jaegermann, W ^a,c  

^a HAHN MEITNER INSTITUT   (Germany)

^b Department of Environmental and Radiological Health Sciences   (United States)

^c DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE TRANSFER; ELECTRONIC DENSITY OF STATES; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; FERMI LEVEL; INTERFACES (MATERIALS); QUANTUM THEORY; SEMICONDUCTING TIN COMPOUNDS; ULTRAVIOLET SPECTROSCOPY; VAN DER WAALS FORCES; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON AFFINITY RULE; IONIZATION ENERGY; VALENCE BAND;

HETEROJUNCTIONS;

EID: 0033092772     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369590     Document Type: Article

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