SCOPUS 정보 검색 플랫폼

Volumn 7, Issue 19, 2015, Pages 8695-8700

Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT

(9) Zhou, Changjian a,b Wang, Xinsheng a Raju, Salahuddin b Lin, Ziyuan a Villaroman, Daniel b Huang, Baoling b Chan, Helen Lai Wa a Chan, Mansun b Chai, Yang a

a HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; DIELECTRIC MATERIALS; GATE DIELECTRICS; LEAD; MOLYBDENUM COMPOUNDS; THRESHOLD VOLTAGE; TITANIUM OXIDES; TRANSISTORS;

EQUIVALENT OXIDE THICKNESS; FIELD-EFFECT MOBILITIES; HIGH-CRYSTALLINE QUALITY; LAYERED MATERIAL; LAYERED SEMICONDUCTORS; LOW THRESHOLD VOLTAGE; SCALING LIMITS; SUBTHRESHOLD SWING;

FIELD EFFECT TRANSISTORS;

EID: 84929208900 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c5nr01072a Document Type: Article

Times cited : (136)

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