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Nanoscale

Volumn 7, Issue 38, 2015, Pages 15711-15718

A study of lateral Schottky contacts in WSe2 and MoS2 field effect transistors using scanning photocurrent microscopy

(6) Yi, Ya a Wu, Changming a Liu, Hongchao a Zeng, Jiali b He, Hongtao b Wang, Jiannong a

a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

b SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACTS (FLUID MECHANICS); LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; OPTOELECTRONIC DEVICES; PHOTOCURRENTS; SELENIUM COMPOUNDS; TRANSITION METALS; TUNGSTEN COMPOUNDS;

DEPLETION REGION; FIELD EFFECT TRANSISTOR (FETS); POSITION DEPENDENTS; SCANNING PHOTOCURRENT MICROSCOPIES; SCHOTTKY CONTACTS; SHORT-CIRCUIT PHOTOCURRENT; TRANSITION METAL DICHALCOGENIDES; TWO DIMENSIONAL (2 D);

FIELD EFFECT TRANSISTORS;

EID: 84942693309 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c5nr04592d Document Type: Article

Times cited : (47)

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