Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

APL Materials

Volumn 2, Issue 9, 2014, Pages

  Chen, Kevin ^a   Kiriya, Daisuke ^a   Hettick, Mark ^a   Tosun, Mahmut ^a   Ha, Tae Jun ^a,b   Madhvapathy, Surabhi Rao ^a   Desai, Sujay ^a   Sachid, Angada ^a   Javey, Ali ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SILICON NITRIDE; THIN FILMS;

DEPOSITION PROCESS; EFFICIENT ELECTRON INJECTION; ELECTRON CONCENTRATION; FIELD-INDUCED EFFECTS; FIXED CHARGE DENSITY; FIXED CHARGES; SCHOTTKY BARRIERS; SILICON NITRIDE THIN FILMS;

SELENIUM COMPOUNDS;

EID: 84981528630     PISSN: None     EISSN: 2166532X     Source Type: Journal    
DOI: 10.1063/1.4891824     Document Type: Article

References (31)

1. K. I. Bolotin, K. J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, and H. L. Stormer, Solid State Commun. 146, 351 (2008).
2. Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, Nat. Nanotechnol. 7, 699 (2012).
3. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nat. Nanotechnol. 6, 147 (2011).
4. H. Liu, A. T. Neal, and P. D. Ye, ACS Nano 6, 8563 (2012).
5. B. W. H. Baugher, H. O. H. Churchill, Y. Yang, and P. Jarillo-Herrero, Nat. Nanotechnol. 9, 262 (2014).
6. J. S. Ross, P. Klement, A. M. Jones, N. J. Ghimire, J. Yan, D. G. Mandrus, T. Taniguchi, K. Watanabe, K. Kitamura, W. Yao, D. H. Cobden, and X. Xu, Nat. Nanotechnol. 9, 268 (2014).
7. M. Chhowalla, H. S. Shin, G. Eda, L.-J. Li, K. P. Loh, and H. Zhang, Nat. Chem. 5, 263 (2013).
8. H. Fang, M. Tosun, G. Seol, T. C. Chang, K. Takei, J. Guo, and A. Javey, Nano Lett. 13, 1991 (2013).
9. M. Schmidt, M. C. Lemme, H. D. B. Gottlob, F. Driussi, L. Selmi, and H. Kurz, Solid-State Electron. 53, 1246 (2009).
10. T. Roy, M. Tosun, J. S. Kang, A. B. Sachid, S. B. Desai, M. Hettick, C. C. Hu, and A. Javey, ACS Nano 8, 6259 (2014).
11. S. Das, H.-Y. Chen, A. V. Penumatcha, and J. Appenzeller, Nano Lett. 13, 100 (2013).
12. D. Kiriya, M. Tosun, P. Zhao, J. S. Kang, and A. Javey, J. Am. Chem. Soc. 136, 7853 (2014).
13. H. Fang, S. Chuang, T. C. Chang, K. Takei, T. Takahashi, and A. Javey, Nano Lett. 12, 3788 (2012).
14. A. G. Aberle, Sol. Energy Mater. Sol. Cells 65, 239 (2001).
15. T. Lauinger, J. Schmidt, A. G. Aberle, and R. Hezel, Appl. Phys. Lett. 68, 1232 (1996).
16. V. Sharma, C. Tracy, D. Schroder, S. Herasimenka, W. Dauksher, and S. Bowden, Appl. Phys. Lett. 104, 053503 (2014).
17. A. G. Aberle and R. Hezel, Prog. Photovolt. Res. Appl. 5, 29 (1997).
18. J. D. Moschner, J. Henze, J. Schmidt, and R. Hezel, Prog. Photovolt. Res. Appl. 12, 21 (2004).
19. J. Robertson, Philos. Mag. B 69, 307 (1994).
20. S. Dauwe, L. Mittelstädt, A. Metz, and R. Hezel, Prog. Photovolt. Res. Appl. 10, 271 (2002).
21. R. Hezel and K. Jaeger, J. Electrochem. Soc. 136, 518 (1989).
22. R. Schorner, R. Hezel, and R. Hezel, IEEE Trans. Electron Dev. 28, 1466 (1981).
23. M. M. Benameur, B. Radisavljevic, J. S. Héron, S. Sahoo, H. Berger, and A. Kis, Nanotechnology 22, 125706 (2011).
24. D. K. Schroder, Semiconductor Material and Device Characterization (John Wiley and Sons, 2006).
25. G. Scardera, T. Puzzer, G. Conibeer, and M. A. Green, J. Appl. Phys. 104, 104310 (2008).
26. E. Bustarret, M. Bensouda, M. C. Habrard, J. C. Bruyère, S. Poulin, and S. C. Gujrathi, Phys. Rev. B 38, 8171 (1988).
27. H. Mäckel and R. Lüdemann, J. Appl. Phys. 92, 2602 (2002).
28. K. F. Mak, K. He, C. Lee, G. H. Lee, J. Hone, T. F. Heinz, and J. Shan, Nat. Mater. 12, 207 (2013).
29. S. Mouri, Y. Miyauchi, and K. Matsuda, Nano Lett. 13, 5944 (2013).
30. A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, Nat. Nanotechnol. 8, 634 (2013).
31. B. Chakraborty, A. Bera, D. V. S. Muthu, S. Bhowmick, U. V. Waghmare, and A. K. Sood, Phys. Rev. B 85, 161403 (2012).