P-type doping of MoS2 thin films using Nb

Applied Physics Letters

Volumn 104, Issue 9, 2014, Pages

  Laskar, Masihhur R ^a   Nath, Digbijoy N ^a   Ma, Lu ^b   Lee II, Edwin W ^a   Lee, Choong Hee ^a   Kent, Thomas ^b   Yang, Zihao ^a   Mishra, Rohan ^c,d   Roldan, Manuel A ^d,e   Idrobo, Juan Carlos ^d   Pantelides, Sokrates T ^c,d,f   Pennycook, Stephen J ^g   Myers, Roberto C ^a,b   Wu, Yiying ^b   Rajan, Siddharth ^a,b  

^a Ohio State University   (United States)

^b OHIO STATE UNIVERSITY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d OAK RIDGE NATIONAL LABORATORY   (United States)

^e UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^f VANDERBILT UNIVERSITY   (United States)

^g University of Tennessee Knoxville   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HALL MOBILITY; HOLE MOBILITY; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; NIOBIUM COMPOUNDS; NIOBIUM METALLOGRAPHY; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DOPING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ABSORPTION EDGES; ABSORPTION MEASUREMENTS; CHEMICAL VAPOR DEPOSITED; CRYSTALLINE NATURE; CRYSTALLINE QUALITY; EXPECTED VALUES; RAMAN CHARACTERIZATION; SCANNING TRANSMISSION ELECTRON MICROSCOPES;

SULFUR COMPOUNDS;

EID: 84896778973     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4867197     Document Type: Article

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