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Volumn 8, Issue 9, 2014, Pages 9629-9635

Excited Excitonic States in 1L, 2L, 3L, and Bulk WSe2 Observed by Resonant Raman Spectroscopy

Author keywords

electronic properties; excitonic states; resonant Raman spectroscopy; transition metal dichalcogenides; WSe2

Indexed keywords

ELECTRONIC PROPERTIES; EXCITONS; LASER EXCITATION; PHONONS; RAMAN SPECTROSCOPY; TRANSITION METALS;

EID: 84921395540     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn504088g     Document Type: Article
Times cited : (245)

References (28)
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    • Temperature Dependence of the Dielectric Function and Interband Critical Points in Silicon
    • Lautenschlager, P.; Garriga, M.; Vina, L.; Cardona, M. Temperature Dependence of the Dielectric Function and Interband Critical Points in Silicon Phys. Rev. B 1987, 36, 4821
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    • Lautenschlager, P.1    Garriga, M.2    Vina, L.3    Cardona, M.4
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    • Theory of Double-Resonant Raman Spectra in Graphene: Intensity and Line Shape of Defect-Induced and Two-Phonon Bands
    • Venezuela, P.; Lazzeri, M.; Mauri, F. Theory of Double-Resonant Raman Spectra in Graphene: Intensity and Line Shape of Defect-Induced And Two-Phonon Bands Phys. Rev. B 2011, 84, 035433
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    • Venezuela, P.1    Lazzeri, M.2    Mauri, F.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.