Controllable nondegenerate p-type doping of tungsten diselenide by octadecyltrichlorosilane

ACS Nano

Volumn 9, Issue 2, 2015, Pages 1099-1107

  Kang, Dong Ho ^a   Shim, Jaewoo ^a   Jang, Sung Kyu ^b   Jeon, Jeaho ^b   Jeon, Min Hwan ^b   Yeom, Geun Young ^b   Jung, Woo Shik ^c   Jang, Yun Hee ^d   Lee, Sungjoo ^a,b   Park, Jin Hong ^a  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Stanford University   (United States)

^d Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

electronic device; nondegenrate doping; optoelectronic device; OTS; WSe2

Indexed keywords

LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; OPTOELECTRONIC DEVICES; SELENIUM COMPOUNDS; SEMICONDUCTOR DOPING; SULFUR COMPOUNDS; THRESHOLD VOLTAGE; TRANSISTORS; TRANSITION METALS;

ELECTRON CARRIER DENSITY; ELECTRONIC DEVICE; FIELD-EFFECT MOBILITIES; OCTADECYLTRICHLOROSILANE; PERFORMANCE DEGRADATION; PERFORMANCE PARAMETERS; TRANSITION METAL DICHALCOGENIDES; WSE2;

TUNGSTEN COMPOUNDS;

EID: 84923451261     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5074435     Document Type: Article

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