Low-resistance electrical contact to carbon nanotubes with graphitic interfacial layer

IEEE Transactions on Electron Devices

Volumn 59, Issue 1, 2012, Pages 12-19

  Chai, Yang ^a   Hazeghi, Arash ^b   Takei, Kuniharu ^c   Chen, Hong Yu ^a   Chan, Philip C H ^d,e   Javey, Ali ^c   Wong, H S Philip ^a  

^a Stanford University   (United States)

^b Quswami Inc   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^e HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

Amorphous carbon; carbon nanotube (CNT); contact; field effect transistor; graphene; graphitic; interface

Indexed keywords

BACK-GATE; ELECTRICAL CONDUCTIVITY; ELECTRICAL CONTACTS; GRAPHITIC; INTERFACIAL LAYER; LOW RESISTANCE; METAL PAD; NANOELECTRONIC CIRCUITS; NI CATALYSTS; P-TYPE; ROOM TEMPERATURE; SUBTHRESHOLD SWING;

AMORPHOUS CARBON; CONTACTS (FLUID MECHANICS); ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; FIELD EFFECT TRANSISTORS; GRAPHENE; INTERFACES (MATERIALS); METALS; NANOELECTRONICS;

CARBON NANOTUBES;

EID: 84855463133     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2170216     Document Type: Article

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