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Journal of Materials Chemistry C

Volumn 3, Issue 24, 2015, Pages 6291-6300

Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films

(8) Park, M H a Kim, H J a Kim, Y J a Moon, T a Kim, K D a Lee, Y H a Hyun, S D a Hwang, C S a

a Seoul National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; ELECTRIC FIELDS; FERROELECTRIC FILMS; FERROELECTRICITY; OXYGEN VACANCIES; POLARIZATION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR STORAGE; THIN FILMS; TITANIUM NITRIDE; ZIRCONIUM COMPOUNDS;

ANNEALING ATMOSPHERES; ASYMMETRIC DISTRIBUTION; ATOMIC LAYER DEPOSITED; COERCIVE ELECTRIC FIELD; CONDUCTION MECHANISM; OPTICAL DIELECTRIC CONSTANT; POOLE-FRENKEL EMISSION; SEMICONDUCTOR MEMORY;

HAFNIUM COMPOUNDS;

EID: 84933042519 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c5tc01074h Document Type: Article

Times cited : (95)

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- Peacock, P.-W.¹ Robertson, J.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.