Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

Applied Physics Letters

Volumn 99, Issue 11, 2011, Pages

  Muller J ^a   Boscke T S ^b,g   Brauhaus D ^c   Schroder U ^d,g   Bottger U ^c   Sundqvist, J ^a,g   Kcher, P ^a   Mikolajick, T ^d,e   Frey, L ^f  

^a Fraunhofer Center Nanoelectronic Technologies   (Germany)

^b Institut für Werkstoffe der Elektrotechnik ^*  (Germany)

^c RWTH AACHEN UNIVERSITY   (Germany)

^d NAMLAB GGMBH   (Germany)

^e DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^f FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^g QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; DATA RETENTION; HIGH COERCIVE FIELD; MEASUREMENT RANGE; METAL-INSULATOR-METAL CAPACITORS; NON-VOLATILE MEMORY APPLICATION; PIEZOELECTRIC MEASUREMENTS; POLARIZATION STATE; PULSE TECHNIQUE; QUASI-STATIC; REMNANT POLARIZATIONS;

CAPACITORS; FERROELECTRICITY; HAFNIUM; HYSTERESIS; HYSTERESIS LOOPS; METAL INSULATOR BOUNDARIES; POLARIZATION; THIN FILMS; TITANIUM NITRIDE; ZIRCONIUM;

FERROELECTRIC FILMS;

EID: 80053211514     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3636417     Document Type: Article

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