Thin HfxZr1-xO2 films: A new lead-free system for electrostatic supercapacitors with large energy storage density and robust thermal stability

Advanced Energy Materials

Volumn 4, Issue 16, 2014, Pages

  Park, Min Hyuk ^a   Kim, Han Joon ^a   Kim, Yu Jin ^a   Moon, Taehwan ^a   Kim, Keum Do ^a   Hwang, Cheol Seong ^a  

^a Seoul National University   (South Korea)

Author keywords

antiferroelectric materials; atomic layer deposition; energy storage; HfxZr1 xO2; supercapacitors

Indexed keywords

ANTIFERROELECTRIC MATERIALS; ANTIFERROELECTRICITY; ATOMIC LAYER DEPOSITION; ENERGY STORAGE; STORAGE (MATERIALS); SUPERCAPACITOR; ZIRCONIUM COMPOUNDS;

ANTI FERROELECTRICS; ENERGY STORAGE DENSITY; ENERGY STORAGE PROPERTIES; FIELD-CYCLING; HFXZR1-XO2; HIGH ENERGY STORAGE DENSITIES; LEAD-FREE; LEAD-FREE SYSTEMS;

HAFNIUM COMPOUNDS;

EID: 84911126608     PISSN: 16146832     EISSN: 16146840     Source Type: Journal    
DOI: 10.1002/aenm.201400610     Document Type: Article

References (22)

1. S. A. Sherrill, P. Banerjee, G. W. Rubloff, S. B. Lee, Phys. Chem. Chem. Phys. 2011, 13, 20714.
2. L. C. Haspert, E. Gillette, S. B. Lee, G. W. Rubloff, Energy Environ. Sci. 2013, 6, 2578.
3. K. Yao, S. Chen, M. Rahimabady, M. S. Mirshekarloo, S. Yu, F. E. H. Tay, T. Sritharan, L. Lu, IEEE Trans. Ultrason. Ferr. 2011, 58, 1968.
4. J. H. Klootwijk, K. B. Jinesh, W. Dekkers, J. F. Verhoeven, F. C. van den Heuvel, H.-D. Kim, D. Blin, M. A. Verheijen, R. G. R. Weemaes, M. Kaiser, J. J. M. Ruigrok, F. Roozeboom, IEEE Electron Device Lett. 2008, 29, 740.
5. P. Banerjee, I. Perez, L. Henn-Lecordier, S. B. Lee, G. W. Rubloff, Nat. Nanotechnol. 2009, 4, 292.
6. C. C. B. Bufon, J. D. C. González, D. J. Thurmer, D. Grimm, M. Bauer, O. G. Schmidt, Nano Lett. 2010, 10, 2506.
7. X. Hao, Y. Wang, L. Zhang, L. Zhang, S. An, Appl. Phys. Lett. 2013, 102, 163903.
8. B. Ma, D.-K. Kwon, M. Narayanan, U. Balachandran, J. Mater. Res. 2009, 24, 2993.
9. J. F. Scott, Ferroelectric Memories, Springer-Verlag, Heidelberg, Germany 2000.
10. J. Ge, X. Dong, Y. Chen, F. Cao, G. Wang, Appl. Phys. Lett. 2013, 102, 142905.
11. J. Ge, D. Remiens, J. Costecalde, Y. Chen, X. Dong, G. Wang, Appl. Phys. Lett. 2013, 103, 162903.
12. J. Li, S. Tan, S. Ding, H. Li, L. Yang, Z. Zhang, J. Mater. Chem. 2012, 22, 23468.
13. T. S. Böscke, J. Müller, D. Bräuhaus, U. Schröder, U. Böttger, Appl. Phys. Lett. 2011, 99, 102903.
14. S. Mueller, J. Mueller, A. Singh, S. Riedel, J. Sundqvist, U. Schroeder, T. Mikolajick, Adv. Funct. Mater. 2012, 22, 2412.
15. J. Müller, T. S. Böscke, U. Schröder, S. Mueller, D. Bräuhaus, U. Böttger, L. Frey, T. Mikolajick, Nano Lett. 2012, 12, 4318.
16. M. H. Park, H. J. Kim, Y. J. Kim, T. Moon, C. S. Hwang, Appl. Phys. Lett. 2014, 104, 072901.
17. M. H. Park, H. J. Kim, Y. J. Kim, W. Lee, H. K. Kim, C. S. Hwang, Appl. Phys. Lett. 2013, 102, 112914.
18. M. H. Park, H. J. Kim, Y. J. Kim, W. Lee, T. Moon, C. S. Hwang, Appl. Phys. Lett. 2013, 102, 242905.
19. M. H. Park, H. J. Kim, Y. J. Kim, W. Jeon, T. Moon, C. S. Hwang, Phys. Status Solidi RRL, 2014, 8, 532.
20. A. S. Mischenko, Q. Zhang, J. F. Scott, R. W. Whatmore, N. D. Mathur, Science 2006, 311, 1270.
21. D. Zhou, J. Xu, Y. Guan, F. Cao, X. Dong, J. Müller, T. Schenk, U. Schröder, Appl. Phys. Lett. 2013, 103, 192904.
22. Y.-H. Kim, J. C. Lee, Microelectron. Reliab. 2004, 44, 183.