Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties

Applied Physics Letters

Volumn 101, Issue 8, 2012, Pages

  Olsen, T ^a,b   Schroder U ^a   Muller S ^a   Krause, A ^a   Martin, D ^a   Singh, A ^a   Muller J ^c   Geidel, M ^d   Mikolajick, T ^a,d  

^a NAMLAB GGMBH   (Germany)

^b UNIVERSITY OF ALBERTA   (Canada)

^c Fraunhofer Center Nanoelectronic Technologies   (Germany)

^d DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; COSPUTTERING; DOPANT CONCENTRATIONS; DOPING CONCENTRATION; ELECTRIC POLARIZATION; FERROELECTRIC PROPERTY; GRAZING INCIDENCE X-RAY DIFFRACTION; HAFNIUM OXIDE THIN FILMS; ORTHORHOMBIC PHASE; RELATIVE PERMITTIVITY; SILICON SUBSTRATES; SPUTTERED FILMS; THIN-FILM CAPACITORS;

ATOMIC LAYER DEPOSITION; ELECTRIC PROPERTIES; FERROELECTRICITY; HAFNIUM OXIDES; PERMITTIVITY MEASUREMENT; SEMICONDUCTOR DOPING; THIN FILM CIRCUITS; TITANIUM NITRIDE; X RAY DIFFRACTION; YTTRIUM;

YTTRIUM ALLOYS;

EID: 84865526703     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4747209     Document Type: Article

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