High performance metal-insulator-metal capacitors with atomic vapor deposited HfO2 dielectrics

Thin Solid Films

Volumn 518, Issue 15, 2010, Pages 4380-4384

  Lukosius, M ^a   Walczyk, Ch ^a   Fraschke, M ^a   Wolansky, D ^a   Richter, H ^a   Wenger, Ch ^a  

^a IHP   (Germany)

Author keywords

Atomic Vapor Deposition; Capacitors; Hafnium oxide; Metal Insulator Metal devices

Indexed keywords

ATOMIC VAPOR; ATOMIC VAPOR DEPOSITION; BACK END OF LINES; BREAKDOWN VOLTAGE; CAPACITANCE DENSITY; CAPACITANCE VOLTAGE; CUBIC PHASE; DEPOSITION TEMPERATURES; DIELECTRIC CONSTANTS; ELECTRICAL PROPERTY; HIGH-K DIELECTRIC; METAL INSULATOR METALS; METAL-INSULATOR-METAL CAPACITORS; PROCESS PRESSURE; STEP COVERAGE; STRUCTURAL AND ELECTRICAL PROPERTIES; STRUCTURED WAFERS; TETRAKIS(ETHYLMETHYLAMIDO)HAFNIUM;

AMORPHOUS FILMS; ASPECT RATIO; ATOMS; CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; HAFNIUM; HAFNIUM OXIDES; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES; OXIDES; SEMICONDUCTOR INSULATOR BOUNDARIES; TITANIUM NITRIDE; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

VAPOR DEPOSITION;

EID: 77953131412     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.01.060     Document Type: Article

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