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Volumn 24, Issue 32, 2014, Pages 5086-5095

Highly uniform, electroforming-free, and self-rectifying resistive memory in the Pt/Ta2O5/HfO2-x/TiN structure

Author keywords

electroforming free; high uniformity; resistive switching; self rectification

Indexed keywords

ELECTROCHEMISTRY; ELECTROMETALLURGY; HAFNIUM OXIDES; PLATINUM; RANDOM ACCESS STORAGE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR STORAGE; SWITCHING; TANTALUM OXIDES; TITANIUM NITRIDE;

EID: 84906568985     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201400064     Document Type: Article
Times cited : (203)

References (34)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.