Reliability characteristics of ferroelectric Si:HfO2 thin films for memory applications

IEEE Transactions on Device and Materials Reliability

Volumn 13, Issue 1, 2013, Pages 93-97

  Mueller, Stefan ^a   Müller, Johannes ^b   Schroeder, Uwe ^a   Mikolajick, Thomas ^a,c  

^a NAMLAB GGMBH   (Germany)

^b Fraunhofer Center Nanoelectronic Technologies   (Germany)

^c DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Endurance; ferroelectric HfO2; imprint; retention; temperature stability

Indexed keywords

ANNEALING TEMPERATURES; FERROELECTRIC SWITCHING; IMPRINT; RELIABILITY CHARACTERISTICS; RETENTION; SATURATED POLARIZATION; TEMPERATURE STABILITY; WIDE TEMPERATURE RANGES;

ANNEALING; CAPACITORS; DURABILITY; FERROELECTRIC THIN FILMS; FERROELECTRICITY; HAFNIUM OXIDES; RELIABILITY; SILICON; THIN FILMS;

FERROELECTRIC MATERIALS;

EID: 84874953923     PISSN: 15304388     EISSN: 15582574     Source Type: Journal    
DOI: 10.1109/TDMR.2012.2216269     Document Type: Article

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