Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2

Radiation Physics and Chemistry

Volumn 75, Issue 11 SPEC. ISS., 2006, Pages 2097-2101

  Lucovsky, G ^a   Hinkle, C L ^a   Fulton, C C ^b   Stoute, N A ^a   Seo, H ^b   Luning J ^c  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b North Carolina State University   (United States)

^c SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

Conduction band edge states; Grain boundary defect states; Interfacial traps; Jahn Teller splittings; Oxygen atom vacancies; Transition metal oxides; X ray absorption spectra

Indexed keywords

CAPACITANCE; CATHODOLUMINESCENCE; CRYSTAL DEFECTS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTROMAGNETIC WAVE ABSORPTION; GRAIN BOUNDARIES; NANOSTRUCTURED MATERIALS; X RAY ANALYSIS; X RAY SPECTROSCOPY;

CONDUCTION BAND EDGE STATES; GRAIN-BOUNDARY DEFECT STATES; INTERFACIAL TRAPS; JAHN-TELLER SPLITTINGS; OXYGEN ATOM VACANCIES; TRANSITION METAL OXIDES;

ZIRCONIUM COMPOUNDS;

CRYSTALLIN; HAFNIUM; OXYGEN; ZIRCONIUM OXIDE;

ABSORPTION SPECTROSCOPY; ARTICLE; ATOMIC PARTICLE; CRYSTALLIZATION; ELECTRIC CAPACITANCE; ELECTRIC POTENTIAL; ENERGY TRANSFER; MEMBRANE CONDUCTANCE; X RAY ANALYSIS;

EID: 33750149261     PISSN: 0969806X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.radphyschem.2005.07.062     Document Type: Article

References (5)

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