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Volumn 103, Issue 19, 2013, Pages

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

(9) Zhou, Dayu a,b Xu, Jin c Li, Qing a Guan, Yan a Cao, Fei d Dong, Xianlin d Müller, Johannes e Schenk, Tony f Schröder, Uwe f

a DALIAN UNIVERSITY OF TECHNOLOGY (China)

b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (China)

c DALIAN NEUSOFT UNIVERSITY OF INFORMATION (China)

d SHANGHAI INSTITUTE OF CERAMICS (China)

e FRAUNHOFER INSTITUTE FOR PHOTONIC MICROSYSTEMS (Germany)

f DRESDEN UNIVERSITY OF TECHNOLOGY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE MATERIALS; BOTTOM ELECTRODES; COERCIVE VOLTAGES; DEFECT CONCENTRATIONS; HIGH FIELD; NON-VOLATILE MEMORY APPLICATION; POLARIZATION HYSTERESIS LOOPS; SWITCHING STABILITY;

DATA STORAGE EQUIPMENT; FERROELECTRIC THIN FILMS; HAFNIUM OXIDES; OXIDES; SILICON;

WAKES;

EID: 84889770869 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4829064 Document Type: Article

Times cited : (353)

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