The effects of crystallographic orientation and strain of thin Hf 0.5Zr0.5O2 film on its ferroelectricity

Applied Physics Letters

Volumn 104, Issue 7, 2014, Pages

  Park, Min Hyuk ^a   Kim, Han Joon ^a   Kim, Yu Jin ^a   Moon, Taehwan ^a   Hwang, Cheol Seong ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; FERROELECTRIC FILMS; FERROELECTRICITY; TENSILE STRAIN; TEXTURES; TITANIUM NITRIDE; ZIRCONIUM COMPOUNDS;

BOTTOM ELECTRODES; CRYSTALLOGRAPHIC ORIENTATIONS; FERROELECTRIC PHASE; FERROELECTRIC PROPERTY; FILM STRAIN; ORTHORHOMBIC PHASE; TETRAGONAL PHASE; TIN ELECTRODES;

HAFNIUM COMPOUNDS;

EID: 84897382804     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4866008     Document Type: Article

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