Bulk and interfacial oxygen defects in HfO2 gate dielectric stacks: A critical assessment

ECS Transactions

Volumn 11, Issue 4, 2007, Pages 235-249

  McIntyre, P C ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; GATE DIELECTRICS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; LOGIC GATES; OXIDE FILMS; OXYGEN; POINT DEFECTS;

CRITICAL ASSESSMENT; ELECTRICAL ACTIVITIES; HFO2 GATE DIELECTRICS; HIGH-K GATE STACKS; INTERFACIAL OXYGEN; KINETIC PROCESS; OXIDE INTERFACES; OXYGEN COORDINATION;

DIELECTRIC MATERIALS;

EID: 45249117226     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2779564     Document Type: Conference Paper

References (50)

1. A Kerber et al., IEEE Electron Dev. Lett 24, 87 (2003).
2. E.P. Gusev, V. Narayanan, and M.M. Frank, IBM J. Res. & Dev. 50, 387 (2006).
3. S.C. Song et al., m VLSI Symposium Tech. Digest, p. 13, IEEE (2006).
4. H. Kim et al., J. Appl. Phys. 96, 3467 (2004).
5. K-I. Seo et al., Appl. Phys. Lett. 89, 142912 (2006).
6. J-H. Ha, K.J. Cho and P.C. McIntyre, J. Appl. Phys. 101, 33706 (2007).
7. S. Ramanathan et al., Appl. Phys. Lett. 79, 3311 (2001).
8. M-T. Ho et al., Appl. Phys. Lett. 87, 133103 (2005).
9. Y. Wang et al., Appl. Phys. Lett. 90, 022906 (2007).
10. D.A. Buchanan and D. Felnhofer, in Defects in High-k Dielectrics, E.P. Gusev, Editor, p. 41, Springer (2005).
11. H. Takeuchi, D. Ha and T.J. King, J. Vac. Sci. Tech. A 22, 1337 (2004).
12. S. Ramanathan et al., Phil. Mag. Lett. 82, 519 (2002).
13. M-Y. Ho, J. Appl. Phys. 93, 1477 (2003).
14. H. Kim et al., Appl. Phys. Lett. 82, 106 (2003).
15. H. Kim et al. Appl. Phys. Lett. 84, 2064 (2004).
16. P.C. Mclntyre, H. Kim, and K.C. Saraswat, in Defects in High-k Dielectrics, E.P. Gusev, Editor, p. 109, Springer (2005).
17. D. Ceresoli and D. Vanderbilt, Phys. Rev. B 74, 125108 (2006).
18. P. Brodqvist and A. Pasquarello, Appl Phys. Lett. 89, 262904 (2006).
19. K. Shiraishi et al., VLSI Symposium Tech. Digest, p. 108 (2004).
20. E. Cartier et al., VLSI Symposium Tech. Digest, p. 230 (2005).
21. K. Sasaki and J. Maier, Sol. State Ionics, 303 (2000).
22. A.S. Foster et al., Phys. Rev. B 65, 174117 (2002);
23. ibid. 64, 224108 (2001).
24. W.L. Scopel et al., Appl. Phys. Lett. B 84, 1492 (2004).
25. U. Brossmann et al., J. Appl. Phys. 85, 7646 (1999).
26. L. Simpson and R.E. Carter, J. Am. Ceram. Soc. 49, 139 (1966).
27. D.W. Tannhauser et al., Nucl. Instrum. Methods 281, 504 (1983).
28. B.K. Kim et al., J. Am. Ceram. Soc. 76, 2119 (1993).
29. H. Solomon et al., in Ceramics Transactions, T.O. Mason and J.L. Routbort, Editors, p. 175, American Ceramic Society, Westerville, OH (1991).
30. V. Ramaswamy et al., J. Catal 200, 250 (2001).
31. E. Giamello et al., Mater. Chem. Phys. 29, 379 (1991).
32. M. Anpo et al., Top. Catal. 8, 189 (1999).
33. A.Y. Kang, P.M. Lenahan, and J.F. Conley, Appl. Phys. Lett. 83, 3407 (2003).
34. Y. Akasaka et al., Jpn. J. Appl. Phys. 45, L1289 (2006).
35. F.A. Kröger and V.J. Vink, in Solid State Physics, Vol. 3, F. Seitz and D. Tumbull, Editors, p. 307, Academic Press, New York, NY ( 1956).
36. rd Edition, p. 547, Taylor and Francis, Philadelphia, PA (1995).
37. nd Edition, p. 290, John Wiley & Sons, New York, NY (1972).
38. P.M. Fahey, P.B. Griffin, and J.D. Plummer, Rev. Mod. Phys. 61, 289 (1989).
39. K. Xiong et al., Appl. Phys. Lett. 87, 183505 (2005).
40. K. Xiong et al. Phys. Status Solidi B 243, 2071 (2006).
41. J.L. Gavartin et al., Appl. Phys. Lett. 88, 082901 (2006).
42. V.V. Afanas'ev et al., Appl. Phys. Lett. 81, 1053 (2002);
43. J. Robertson, Eur. Phys. J.: Appl Phys. 28, 265 (2004).
44. S. Guha and V. Narayanan, Phys. Rev. Lett. 98, 196101 (2007).
45. J. Ha et al., Appl. Phys. Lett. 90, 112911 (2007).
46. G. Lucovsky et al., J. Vac. Sci. Technol. B 22, 2097 (2004)
47. 2 film analyzed in these simulations was crystalline, this is not expected to alter their predictions qualitatively.
48. J. Ha et al., Appl. Phys. Lett. 85, 5884 (2005).
49. R. Sreenivasan et al., Appl. Phys. Lett. 89, 112903 (2006).
50. K. Tse and J. Robertson, Appl. Phys. Lett. 89, 142914 (2006).