Behavior of hydrogen in high dielectric constant oxide gate insulators

Applied Physics Letters

Volumn 83, Issue 10, 2003, Pages 2025-2027

  Peacock, P W ^a   Robertson, J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; ELECTRON ENERGY ANALYZERS; HYDROGEN; PERMITTIVITY; SEMICONDUCTOR INSULATOR BOUNDARIES;

BAND EDGES;

FIELD EFFECT TRANSISTORS;

EID: 0141989751     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1609245     Document Type: Article

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