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Applied Physics Letters

Volumn 99, Issue 10, 2011, Pages

Ferroelectricity in hafnium oxide thin films

(5) Boscke T S a Muller J b Brauhaus D c Schroder U d Bottger U c

a Fraunhofer CNT ^* (Germany)

b Fraunhofer Center Nanoelectronic Technologies (Germany)

c RWTH AACHEN UNIVERSITY (Germany)

d NAMLAB GGMBH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FIELD; CRYSTALLINE PHASIS; FERROELECTRIC BEHAVIOR; FERROELECTRIC FIELD EFFECT TRANSISTORS; HAFNIUM OXIDE THIN FILMS; MONOCLINIC PHASE; ORTHORHOMBIC PHASE; PHASE MIXTURE; PIEZOELECTRIC RESPONSE; POLARIZATION MEASUREMENTS; SILICON TECHNOLOGIES;

FERROELECTRICITY; FIELD EFFECT TRANSISTORS; HAFNIUM; HAFNIUM OXIDES; OXIDE FILMS; POLARIZATION; SILICON COMPOUNDS; SILICON OXIDES; THIN FILMS;

FERROELECTRIC FILMS;

EID: 80052804532 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3634052 Document Type: Article

Times cited : (2191)

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