Effect of forming gas annealing on the ferroelectric properties of Hf 0.5Zr0.5O2 thin films with and without Pt electrodes

Applied Physics Letters

Volumn 102, Issue 11, 2013, Pages

  Hyuk Park, Min ^a   Joon Kim, Han ^a   Jin Kim, Yu ^a   Lee, Woongkyu ^a   Kyeom Kim, Hyo ^a   Seong Hwang, Cheol ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEGREE OF DEGRADATION; FERROELECTRIC MEMORY; FERROELECTRIC PROPERTY; FORMING GAS ANNEALING; PB(ZR , TI)O; PT ELECTRODE; TIN LAYERS;

FERROELECTRIC FILMS; FERROELECTRIC MATERIALS; FERROELECTRICITY; HAFNIUM; LEAD; PLATINUM;

ZIRCONIUM;

EID: 84875693319     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4798265     Document Type: Article

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