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Volumn 110, Issue 11, 2011, Pages

Ferroelectricity in yttrium-doped hafnium oxide

(11) Muller J a Schroder U b Boscke T S c Muller I d Bottger U d Wilde, L a Sundqvist, J a Lemberger, M e Kucher P a Mikolajick, T b,f Frey, L e,g

a Fraunhofer Center Nanoelectronic Technologies (Germany)

b NAMLAB GGMBH (Germany)

c Institut für Werkstoffe der Elektrotechnik ^* (Germany)

d RWTH AACHEN UNIVERSITY (Germany)

e FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB (Germany)

f DRESDEN UNIVERSITY OF TECHNOLOGY (Germany)

g UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; FERROELECTRIC FILMS; FERROELECTRICITY; METAL INSULATOR BOUNDARIES; OXIDE FILMS; OXIDES; POLARIZATION; SEMICONDUCTOR DOPING; THICK FILMS; TITANIUM NITRIDE; YTTRIUM COMPOUNDS;

CMOS COMPATIBILITY; CONFORMAL DEPOSITION; FERROELECTRIC MEMORY; FERROELECTRIC PHASE; GRAZING INCIDENCE X-RAY DIFFRACTION; HAFNIUM OXIDE THIN FILMS; METAL INSULATOR METAL CAPACITOR (MIM); POLARIZATION HYSTERESIS;

HAFNIUM OXIDES;

EID: 84857705566 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3667205 Document Type: Article

Times cited : (617)

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