Phenomenological modeling of memristive devices

Applied Physics A: Materials Science and Processing

Volumn 118, Issue 3, 2015, Pages 779-786

  Merrikh Bayat, F ^a   Hoskins, B ^a   Strukov, D B ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDES; TITANIUM DIOXIDE;

CIRCUIT MODELING; CONDUCTION MECHANISM; ELECTRICAL STRESS; FITTING FUNCTIONS; MEMRISTIVE BEHAVIOR; MODELING METHODOLOGY; PHENOMENOLOGICAL MODELING; RESISTANCE SWITCHING;

MEMRISTORS;

EID: 84922835742     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-015-8993-7     Document Type: Article

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