-
1
-
-
84857340323
-
Resistive switching phenomena in thin films: Materials, devices and applications
-
Feb
-
D. B. Strukov, and H. Kohlstedt, "Resistive switching phenomena in thin films: materials, devices and applications," MRS Bulletin, vol. 37, pp. 108-114, Feb 2012.
-
(2012)
MRS Bulletin
, vol.37
, pp. 108-114
-
-
Strukov, D.B.1
Kohlstedt, H.2
-
2
-
-
79952672416
-
Memristor applications for programmable analog ICs
-
Mar
-
S. Shin, K. Kim, and S. M. Kang, "Memristor applications for programmable analog ICs," IEEE Transactions on Nanotechnology, vol. 10, pp. 266-274, Mar 2011.
-
(2011)
IEEE Transactions on Nanotechnology
, vol.10
, pp. 266-274
-
-
Shin, S.1
Kim, K.2
Kang, S.M.3
-
3
-
-
77955656422
-
Practical approach to programmable analog circuits with memristors
-
Aug
-
Y. V. Pershin, and M. Di Ventra, "Practical approach to programmable analog circuits with memristors," IEEE Transactions on Circuits and Systems I-Regular Papers, vol. 57, pp. 1857-1864, Aug 2010.
-
(2010)
IEEE Transactions on Circuits and Systems I-Regular Papers
, vol.57
, pp. 1857-1864
-
-
Pershin, Y.V.1
Di Ventra, M.2
-
4
-
-
79960834019
-
An electronic synapse device based on metal oxide resistive switching memory for neuromorphic computation
-
Aug
-
S. M. Yu, Y. Wu, R. Jeyasingh, D. Kuzum, and H. -S. P. Wong, "An electronic synapse device based on metal oxide resistive switching memory for neuromorphic computation," IEEE Transactions on Electron Devices, vol. 58, pp. 2729-2737, Aug 2011.
-
(2011)
IEEE Transactions on Electron Devices
, vol.58
, pp. 2729-2737
-
-
Yu, S.M.1
Wu, Y.2
Jeyasingh, R.3
Kuzum, D.4
Wong, H.S.P.5
-
5
-
-
79956129424
-
Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device
-
Jun
-
K. Seo, et al., "Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device," Nanotechnology, vol. 22, p. 254023, Jun 2011.
-
(2011)
Nanotechnology
, vol.22
, pp. 254023
-
-
Seo, K.1
-
6
-
-
77951026760
-
Nanoscale memristor device as synapse in neuromorphic systems
-
Apr
-
S. H. Jo, et al., "Nanoscale memristor device as synapse in neuromorphic systems," Nano Letters, vol. 10, pp. 1297-1301, Apr 2010.
-
(2010)
Nano Letters
, vol.10
, pp. 1297-1301
-
-
Jo, S.H.1
-
7
-
-
79959342648
-
Synaptic behaviors and modeling of a metal oxide memristive device
-
Mar
-
T. Chang, et al., "Synaptic behaviors and modeling of a metal oxide memristive device," Applied Physics A-Materials Science and Processing, vol. 102, pp. 857-863, Mar 2011.
-
(2011)
Applied Physics A-Materials Science and Processing
, vol.102
, pp. 857-863
-
-
Chang, T.1
-
8
-
-
34548685897
-
Self-organized computation with unreliable, memristive nanodevices
-
Sep
-
G. S. Snider, "Self-organized computation with unreliable, memristive nanodevices," Nanotechnology, vol. 18, p. 365202, Sep 2007.
-
(2007)
Nanotechnology
, vol.18
, pp. 365202
-
-
Snider, G.S.1
-
9
-
-
78651515166
-
Variable gain amplifier circuit using titanium dioxide memristors
-
Jan
-
T. A. Wey, and W. D. Jemison, "Variable gain amplifier circuit using titanium dioxide memristors," IET Circuits Devices and Systems, vol. 5, pp. 59-65, Jan 2011.
-
(2011)
IET Circuits Devices and Systems
, vol.5
, pp. 59-65
-
-
Wey, T.A.1
Jemison, W.D.2
-
10
-
-
79851501719
-
Memory effects in complex materials and nanoscale systems
-
Y. V. Pershin, and M. Di Ventra, "Memory effects in complex materials and nanoscale systems," Advances in Physics, vol. 60, pp. 145-227, 2011.
-
(2011)
Advances in Physics
, vol.60
, pp. 145-227
-
-
Pershin, Y.V.1
Di Ventra, M.2
-
11
-
-
84856173450
-
High-precision tuning of state for memristive devices by adaptable variation-tolerant algorithm
-
Feb
-
F. Alibart, L. Gao, B. Hoskins, and D. B. Strukov, "High-precision tuning of state for memristive devices by adaptable variation-tolerant algorithm," Nanotechnology, vol. 23, p. 075201, Feb 2012.
-
(2012)
Nanotechnology
, vol.23
, pp. 075201
-
-
Alibart, F.1
Gao, L.2
Hoskins, B.3
Strukov, D.B.4
-
12
-
-
62549151248
-
Hybrid CMOS/nanoelectronic circuits: Opportunities and challenges
-
Dec
-
K. K. Likharev, "Hybrid CMOS/nanoelectronic circuits: opportunities and challenges", Journal of Nanoelectronics and Optoelectronics, vol. 3, pp. 203-230, Dec 2008.
-
(2008)
Journal of Nanoelectronics and Optoelectronics
, vol.3
, pp. 203-230
-
-
Likharev, K.K.1
-
15
-
-
79956159040
-
Electrochemical metallization memories - Fundamentals, applications, and prospects
-
Jul
-
I. Valov, R. Waser, J. R. Jameson, and M. N. Kozicki, "Electrochemical metallization memories - fundamentals, applications, and prospects," Nanotechnology, vol. 22, p. 254003, Jul 2011.
-
(2011)
Nanotechnology
, vol.22
, pp. 254003
-
-
Valov, I.1
Waser, R.2
Jameson, J.R.3
Kozicki, M.N.4
-
16
-
-
84855463299
-
Atomic switch: Atom/ion movement controlled devices for beyond von-neumann computers
-
Jan
-
T. Hasegawa, K. Terabe, T. Tsuruoka, and M. Aono, "Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers," Advanced Materials, vol. 24, pp. 252-267, Jan 2012.
-
(2012)
Advanced Materials
, vol.24
, pp. 252-267
-
-
Hasegawa, T.1
Terabe, K.2
Tsuruoka, T.3
Aono, M.4
-
17
-
-
20444372632
-
Nanoscale memory elements based on solid-state electrolytes
-
May
-
M. N. Kozicki, M. Park, and M. Mitkova, "Nanoscale memory elements based on solid-state electrolytes," IEEE Transactions on Nanotechnology, vol. 4, pp. 331-338, May 2005.
-
(2005)
IEEE Transactions on Nanotechnology
, vol.4
, pp. 331-338
-
-
Kozicki, M.N.1
Park, M.2
Mitkova, M.3
-
18
-
-
11944255355
-
Quantized conductance atomic switch
-
Jan
-
K. Terabe, T. Hasegawa, T. Nakayama, and M. Aono, "Quantized conductance atomic switch," Nature, vol. 433, pp. 47-50, Jan 2005.
-
(2005)
Nature
, vol.433
, pp. 47-50
-
-
Terabe, K.1
Hasegawa, T.2
Nakayama, T.3
Aono, M.4
-
19
-
-
67349281548
-
Study of multilevel programming in programmable metallization cell (PMC) memory
-
May
-
U. Russo, D. Kamalanathan, D. Ielmini, A. L. Lacaita, and M. N. Kozicki, "Study of multilevel programming in programmable metallization cell (PMC) memory," IEEE Transactions on Electron Devices, vol. 56, pp. 1040-1047, May 2009.
-
(2009)
IEEE Transactions on Electron Devices
, vol.56
, pp. 1040-1047
-
-
Russo, U.1
Kamalanathan, D.2
Ielmini, D.3
Lacaita, A.L.4
Kozicki, M.N.5
-
20
-
-
65249125383
-
Fully room-temperature- Fabricated nonvolatile resistive memory for ultrafast and high-density memory application
-
Apr
-
Y. C. Yang, F. Pan, Q. Liu, M. Liu, and F. Zeng, "Fully room-temperature- fabricated nonvolatile resistive memory for ultrafast and high-density memory application," Nano Letters, vol. 9, pp. 1636-1643, Apr 2009.
-
(2009)
Nano Letters
, vol.9
, pp. 1636-1643
-
-
Yang, Y.C.1
Pan, F.2
Liu, Q.3
Liu, M.4
Zeng, F.5
-
21
-
-
65249109198
-
The growth of metallic nanofilaments in resistive switching memory devices based on solid electrolytes
-
Apr
-
H. X. Guo, et al., "The growth of metallic nanofilaments in resistive switching memory devices based on solid electrolytes," Applied Physics Letters, vol. 94, p. 153504, Apr 2009.
-
(2009)
Applied Physics Letters
, vol.94
, pp. 153504
-
-
Guo, H.X.1
-
22
-
-
35748974883
-
Nanoionics-based resistive switching memories
-
Nov
-
R. Waser, and M. Aono, "Nanoionics-based resistive switching memories," Nature Materials, vol. 6, pp. 833-840, Nov 2007.
-
(2007)
Nature Materials
, vol.6
, pp. 833-840
-
-
Waser, R.1
Aono, M.2
-
23
-
-
63649138779
-
High-density crossbar arrays based on a Si memristive system
-
Feb
-
S. H. Jo, K. H. Kim, and W. Lu, "High-density crossbar arrays based on a Si memristive system," Nano Letters, vol. 9, pp. 870-874, Feb 2009.
-
(2009)
Nano Letters
, vol.9
, pp. 870-874
-
-
Jo, S.H.1
Kim, K.H.2
Lu, W.3
-
24
-
-
61649104641
-
Programmable resistance switching in nanoscale two-terminal devices
-
Jan
-
S. H. Jo, K. H. Kim, and W. Lu "Programmable resistance switching in nanoscale two-terminal devices," Nano Letters, vol. 9, pp. 496-500, Jan 2009.
-
(2009)
Nano Letters
, vol.9
, pp. 496-500
-
-
Jo, S.H.1
Kim, K.H.2
Lu, W.3
-
25
-
-
40449092679
-
CMOS compatible nanoscale nonvolatile resistance switching memory
-
Feb
-
S. H. Jo, and W. Lu, "CMOS compatible nanoscale nonvolatile resistance switching memory," Nano Letters, vol. 8, pp. 392-397, Feb 2008.
-
(2008)
Nano Letters
, vol.8
, pp. 392-397
-
-
Jo, S.H.1
Lu, W.2
-
26
-
-
84855772398
-
A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications
-
Jan
-
K.-H. Kim, et al., "A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications," Nano Letters, vol. 12, pp. 389-395, Jan 2012.
-
(2012)
Nano Letters
, vol.12
, pp. 389-395
-
-
Kim, K.-H.1
-
28
-
-
76449095917
-
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories
-
Feb
-
D. Ielmini, F. Nardi, and C. Cagli, "Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories," Applied Physics Letters, vol. 96, p. 053503, Feb 2010.
-
(2010)
Applied Physics Letters
, vol.96
, pp. 053503
-
-
Ielmini, D.1
Nardi, F.2
Cagli, C.3
-
29
-
-
75749105482
-
0.7 based resistance switching memory devices with random telegraph noise
-
Jan
-
0.7 based resistance switching memory devices with random telegraph noise," Journal of Applied Physics, vol. 107, p.024517, Jan 2010.
-
(2010)
Journal of Applied Physics
, vol.107
, pp. 024517
-
-
Soni, R.1
-
30
-
-
77958581292
-
2 stack ReRAM
-
Nov
-
2 stack ReRAM," IEEE Electron Device Letters, vol. 31, pp. 1302-1304, Nov 2010.
-
(2010)
IEEE Electron Device Letters
, vol.31
, pp. 1302-1304
-
-
Terai, M.1
Sakotsubo, Y.2
Saito, Y.3
Kotsuji, S.4
Hada, H.5
-
32
-
-
79951826963
-
Electron trapping effect on the switching behavior of contact RRAM devices through random telegraph noise analysis
-
Y. H. Tseng, W. C. Shen, C. E. Huang, C. J. Lin, and Y. C. King, "Electron trapping effect on the switching behavior of contact RRAM devices through random telegraph noise analysis," in: Proc. Int. Electron Devices Meeting (IEDM), pp. 636-639, 2010.
-
(2010)
Proc. Int. Electron Devices Meeting (IEDM)
, pp. 636-639
-
-
Tseng, Y.H.1
Shen, W.C.2
Huang, C.E.3
Lin, C.J.4
King, Y.C.5
-
33
-
-
0032185581
-
Analog versus digital: Extrapolating from eletronics to neurobiology
-
Oct
-
R. Sarpeshkar, "Analog versus digital: extrapolating from eletronics to neurobiology," Journal of Neural Computation, vol. 10, pp. 1601-1638, Oct 1998.
-
(1998)
Journal of Neural Computation
, vol.10
, pp. 1601-1638
-
-
Sarpeshkar, R.1
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