Connecting the physical and electrical properties of Hafnia-based RRAM

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2013, Pages

  Butcher, B ^a,b   Bersuker, G ^a   Gilmer, D C ^a   Larcher, L ^c   Padovani, A ^c   Vandelli, L ^c   Geer, R ^b   Kirsch, P D ^a  

^a SEMATECH   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84894379000     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2013.6724682     Document Type: Conference Paper

References (10)

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2. G. Bersuker, et al, "Metal oxide resistive memory switching mechanism based on conductive filament properties," J. Appl. Phys., 110 (12), pp.124518-12, 2011.
3. B. Butcher, et al., "Modeling the Effects of Different Forming Conditions on RRAM Conductive Filament Stability," IEEE International Memory Workshop (IMW), pp.52-55, 2013.
4. K. P. McKenna, A. L. Shlugger, "The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2," Appl. Phys. Lett., v95, no.22, pp.222111, 2009.
5. L. Larcher, A. Padovani, O. Pirrotta, L. Vandelli, and G. Bersuker, "Microscopic understanding and modeling of HfO2 RRAM device physics," IEEE International Electron Devices meeting (IEDM), pp. 20.1.1 - 20.1.4, 2012.
6. K. G. Young-Fisher, et al., "Leakage current - forming voltage relation and oxygen gettering in HfOx RRAM devices," Electron Device Letters, IEEE, v34, pp. 750-752, 2013.
7. M. Sowinaka, et al., "Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures," Appl. Phys. Lett., v. 100, p. 233509, 2012.
8. S. Koveshnikov et. al., "Real-time study of switching kinetics in integrated 1T/ HfOx 1R RRAM: Intrinsic tunability of set/reset voltage and trade-off with switching time," IEEE International Electron Devices meeting (IEDM), pp.20.4.1, 20.4.3, 10-13, 2012.
9. Yong-En Syu et. al., "Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device Electron Device Letters, IEEE, vol.34, no.7, pp.864,866, 2013.
10. Y. Shimeng, G. Ximeng, and H.-S.P. Wong, "Understanding metal oxide RRAM current overshoot and reliability using Kinetic Monte Carlo simulation," IEEE International Electron Devices meeting (IEDM), pp. 26.1.1 - 26.1.4, 2012.