메뉴 건너뛰기




Volumn 5, Issue , 2014, Pages

Erratum :Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions (Nature Communications (2014) 5 (3990) DOI: 10.1038/ncomms4990);Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions

Author keywords

[No Author keywords available]

Indexed keywords

NIOBIUM; PLATINUM; STRONTIUM; TITANIUM DIOXIDE;

EID: 84901930561     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms10128     Document Type: Erratum
Times cited : (176)

References (40)
  • 1
    • 43549126477 scopus 로고    scopus 로고
    • Resistive switching in transition metal oxides
    • DOI 10.1016/S1369-7021(08)70119-6, PII S1369702108701196
    • Sawa, A. Resistive switching in transition metal oxides. Mater. Today 11, 28-36 (2008). (Pubitemid 351680723)
    • (2008) Materials Today , vol.11 , Issue.6 , pp. 28-36
    • Sawa, A.1
  • 2
    • 77951622926 scopus 로고    scopus 로고
    • Complementary resistive switches for passive nanocrossbar memories
    • Linn, E., Rosezin, R., Kugeler, C. &Waser, R. Complementary resistive switches for passive nanocrossbar memories. Nat. Mater. 9, 403-406 (2010).
    • (2010) Nat. Mater. , vol.9 , pp. 403-406
    • Linn, E.1    Rosezin, R.2    Kugeler, C.3    Waser, R.4
  • 5
    • 84861125089 scopus 로고    scopus 로고
    • Metal-Oxide RRAM
    • Wong, H. S. P. et al. Metal-Oxide RRAM. Proc. IEEE 100, 1951-1970 (2012).
    • (2012) Proc. IEEE , vol.100 , pp. 1951-1970
    • Wong, H.S.P.1
  • 6
    • 55449085689 scopus 로고    scopus 로고
    • Transition-metal-oxide-based resistance-change memories
    • Karg, S. F. et al. Transition-metal-oxide-based resistance-change memories. IBM J. Res. Dev. 52, 481-492 (2008).
    • (2008) IBM J. Res. Dev. , vol.52 , pp. 481-492
    • Karg, S.F.1
  • 7
    • 19744383252 scopus 로고    scopus 로고
    • Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO 3/SrTi0. 99Nb0. 01O3
    • Fujii, T. et al. Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0. 99Nb0. 01O3. Appl. Phys. Lett. 86, 012107 (2005).
    • (2005) Appl. Phys. Lett. , vol.86 , pp. 012107
    • Fujii, T.1
  • 8
    • 34047137158 scopus 로고    scopus 로고
    • Electrical properties and colossal electroresistance of heteroepitaxial SrRuO 3/SrTi1-xNbxO3 (0. 0002rxr0. 02) Schottky junctions
    • Fujii, T. et al. Electrical properties and colossal electroresistance of heteroepitaxial SrRuO3/SrTi1-xNbxO3 (0. 0002rxr0. 02) Schottky junctions. Phys. Rev. B 75, 165101 (2007).
    • (2007) Phys. Rev. B , vol.75 , pp. 165101
    • Fujii, T.1
  • 9
    • 40849145743 scopus 로고    scopus 로고
    • Electrode-dependent electrical properties of metal/Nb-doped SrTiO3 junctions
    • Park, C., Seo, Y., Jung, J. & Kim, D. W. Electrode-dependent electrical properties of metal/Nb-doped SrTiO3 junctions. J. Appl. Phys. 103, 054106 (2008).
    • (2008) J. Appl. Phys. , vol.103 , pp. 054106
    • Park, C.1    Seo, Y.2    Jung, J.3    Kim, D.W.4
  • 10
    • 79961063573 scopus 로고    scopus 로고
    • Temperature dependence of carrier transport and resistance switching in Pt/SrTi1-xNbxO3 Schottky junctions
    • Li, J. Y., Ohashi, N., Okushi, H. & Haneda, H. Temperature dependence of carrier transport and resistance switching in Pt/SrTi1-xNbxO3 Schottky junctions. Phys. Rev. B 83, 125317 (2011).
    • (2011) Phys. Rev. B , vol.83 , pp. 125317
    • Li, J.Y.1    Ohashi, N.2    Okushi, H.3    Haneda, H.4
  • 11
    • 84885575640 scopus 로고    scopus 로고
    • Transient behavior in Pt/Nb-doped SrTiO3 Schottky junctions
    • Kan, D. & Shimakawa, Y. Transient behavior in Pt/Nb-doped SrTiO3 Schottky junctions. Appl. Phys. Lett. 103, 142910 (2013).
    • (2013) Appl. Phys. Lett. , vol.103 , pp. 142910
    • Kan, D.1    Shimakawa, Y.2
  • 12
    • 84881488593 scopus 로고    scopus 로고
    • Investigation of the resistance switching in Au/SrTiO 3:Nb heterojunctions
    • Wang, Y. H. et al. Investigation of the resistance switching in Au/SrTiO3:Nb heterojunctions. Appl. Phys. Lett. 103, 031601 (2013).
    • (2013) Appl. Phys. Lett. , vol.103 , pp. 031601
    • Wang, Y.H.1
  • 13
    • 69749114106 scopus 로고    scopus 로고
    • Strain relaxation in epitaxial Pt films on (001) SrTiO3
    • Son, J., Cagnon, J. & Stemmer, S. Strain relaxation in epitaxial Pt films on (001) SrTiO3. J. Appl. Phys. 106, 043525 (2009).
    • (2009) J. Appl. Phys. , vol.106 , pp. 043525
    • Son, J.1    Cagnon, J.2    Stemmer, S.3
  • 16
    • 0004534417 scopus 로고
    • The properties of a metal/oxide semiconductor junction prepared using a high-purity ozone surface treatment
    • Shimizu, T. & Okushi, H. The properties of a metal/oxide semiconductor junction prepared using a high-purity ozone surface treatment. Appl. Phys. Lett. 67, 1411-1413 (1995).
    • (1995) Appl. Phys. Lett. , vol.67 , pp. 1411-1413
    • Shimizu, T.1    Okushi, H.2
  • 18
    • 63749130516 scopus 로고    scopus 로고
    • Inhomogeneous barrier and hysteretic transport properties of Pt/SrTiO3 junctions
    • Kim, H., Park, C., Lee, S. & Kim, D. W. Inhomogeneous barrier and hysteretic transport properties of Pt/SrTiO3 junctions. J. Phys. D 42, 055306 (2009).
    • (2009) J. Phys. D , vol.42 , pp. 055306
    • Kim, H.1    Park, C.2    Lee, S.3    Kim, D.W.4
  • 19
    • 79953740495 scopus 로고    scopus 로고
    • Resistance state-dependent barrier inhomogeneity and transport mechanisms in resistive-switching Pt/SrTiO3 junctions
    • Lee, E., Gwon, M., Kim, D. W. & Kim, H. Resistance state-dependent barrier inhomogeneity and transport mechanisms in resistive-switching Pt/SrTiO3 junctions. Appl. Phys. Lett. 98, 132905 (2011).
    • (2011) Appl. Phys. Lett. , vol.98 , pp. 132905
    • Lee, E.1    Gwon, M.2    Kim, D.W.3    Kim, H.4
  • 20
    • 59849103429 scopus 로고    scopus 로고
    • Electronic transport and colossal electroresistance in SrTiO 3:Nb-based Schottky junctions
    • Shang, D. S. et al. Electronic transport and colossal electroresistance in SrTiO3:Nb-based Schottky junctions. Appl. Phys. Lett. 94, 052105 (2009).
    • (2009) Appl. Phys. Lett. , vol.94 , pp. 052105
    • Shang, D.S.1
  • 21
    • 51749113092 scopus 로고    scopus 로고
    • Photoresponse of the Schottky junction Au/SrTiO3: Nb in different resistive states
    • Shang, D. S., Sun, J. R., Shi, L. & Shen, B. G. Photoresponse of the Schottky junction Au/SrTiO3: Nb in different resistive states. Appl. Phys. Lett. 93, 102106 (2008).
    • (2008) Appl. Phys. Lett. , vol.93 , pp. 102106
    • Shang, D.S.1    Sun, J.R.2    Shi, L.3    Shen, B.G.4
  • 22
    • 0006525278 scopus 로고
    • Measurement of nonlinear polarization of KTaO3 using Schottky diodes
    • Kahng, D. & Wemple, S. H. Measurement of nonlinear polarization of KTaO3 using Schottky diodes. J. Appl. Phys. 36, 2925-2929 (1965).
    • (1965) J. Appl. Phys. , vol.36 , pp. 2925-2929
    • Kahng, D.1    Wemple, S.H.2
  • 23
    • 33749850301 scopus 로고    scopus 로고
    • Origin of the dielectric dead layer in nanoscale capacitors
    • DOI 10.1038/nature05148, PII NATURE05148
    • Stengel, M. & Spaldin, N. A. Origin of the dielectric dead layer in nanoscale capacitors. Nature 443, 679-682 (2006). (Pubitemid 44564708)
    • (2006) Nature , vol.443 , Issue.7112 , pp. 679-682
    • Stengel, M.1    Spaldin, N.A.2
  • 24
    • 70349307406 scopus 로고    scopus 로고
    • Chemisorption of water and carbon dioxide on nanostructured BaTiO 3-SrTiO3(001) surfaces
    • Baniecki, J. D. et al. Chemisorption of water and carbon dioxide on nanostructured BaTiO3-SrTiO3(001) surfaces. J. Appl. Phys. 106, 054109 (2009).
    • (2009) J. Appl. Phys. , vol.106 , pp. 054109
    • Baniecki, J.D.1
  • 26
    • 71049149669 scopus 로고    scopus 로고
    • Analysis of carbon in SrTiO3 grown by hybrid molecular beam epitaxy
    • Jalan, B., Cagnon, J., Mates, T. E. & Stemmer, S. Analysis of carbon in SrTiO3 grown by hybrid molecular beam epitaxy. J. Vac. Sci. Technol. A 27, 1365-1368 (2009).
    • (2009) J. Vac. Sci. Technol. A , vol.27 , pp. 1365-1368
    • Jalan, B.1    Cagnon, J.2    Mates, T.E.3    Stemmer, S.4
  • 28
    • 0035834318 scopus 로고    scopus 로고
    • Recent advances in Schottky barrier concepts
    • Tung, R. T. Recent advances in Schottky barrier concepts. Mater. Sci. Eng. Rep. 35, 1-138 (2001).
    • (2001) Mater. Sci. Eng. Rep. , vol.35 , pp. 1-138
    • Tung, R.T.1
  • 29
    • 0017556846 scopus 로고
    • Work function of elements and its periodicity
    • Michaelson, H. B. Work function of elements and its periodicity. J. Appl. Phys. 48, 4729-4733 (1977).
    • (1977) J. Appl. Phys. , vol.48 , pp. 4729-4733
    • Michaelson, H.B.1
  • 30
    • 0001561168 scopus 로고    scopus 로고
    • Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate
    • DOI 10.1063/1.123476, PII S0003695199034087
    • Robertson, J. & Chen, C. W. Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate. Appl. Phys. Lett. 74, 1168-1170 (1999). (Pubitemid 129710392)
    • (1999) Applied Physics Letters , vol.74 , Issue.8 , pp. 1168-1170
    • Robertson, J.1    Chen, C.W.2
  • 31
    • 0018523693 scopus 로고
    • New and unified model for schottky barrier and III-V insulator interface states formation
    • DOI 10.1116/1.570215
    • Spicer, W. E., Chye, P. W., Skeath, P. R., Su, C. Y. & Lindau, I. New and unified model for schottky-barrier and III-V insulator interface states formation. J. Vac. Sci. Technol. 16, 1422-1433 (1979). (Pubitemid 10467756)
    • (1979) Journal of vacuum science & technology , vol.16 , Issue.5 , pp. 1422-1433
    • Spicer, W.E.1    Chye, P.W.2    Skeath, P.R.3    Su, C.Y.4    Lindau, I.5
  • 33
    • 1842529008 scopus 로고    scopus 로고
    • Surface depletion in doped SrTiO3 thin films
    • Ohtomo, A. & Hwang, H. Y. Surface depletion in doped SrTiO3 thin films. Appl. Phys. Lett. 84, 1716-1718 (2004).
    • (2004) Appl. Phys. Lett. , vol.84 , pp. 1716-1718
    • Ohtomo, A.1    Hwang, H.Y.2
  • 34
    • 77955361373 scopus 로고    scopus 로고
    • Electronic transport in doped SrTiO3: Conduction mechanisms and potential applications
    • Spinelli, A., Torija, M. A., Liu, C., Jan, C. & Leighton, C. Electronic transport in doped SrTiO3: conduction mechanisms and potential applications. Phys. Rev. B 81, 155110 (2010).
    • (2010) Phys. Rev. B , vol.81 , pp. 155110
    • Spinelli, A.1    Torija, M.A.2    Liu, C.3    Jan, C.4    Leighton, C.5
  • 35
    • 84889253441 scopus 로고    scopus 로고
    • In situ electron holography study of charge distribution in highkappa charge-trapping memory
    • Yao, Y. et al. In situ electron holography study of charge distribution in highkappa charge-trapping memory. Nat. Commun. 4, 2764 (2013).
    • (2013) Nat. Commun. , vol.4 , pp. 2764
    • Yao, Y.1
  • 36
    • 62149114373 scopus 로고    scopus 로고
    • Effect of oxygen content and superconductivity on the nonvolatile resistive switching in YBa2Cu3O6x/Nb-doped SrTiO3 heterojunctions
    • Zhang, H. J., Zhang, X. P., Shi, J. P., Tian, H. F. & Zhao, Y. G. Effect of oxygen content and superconductivity on the nonvolatile resistive switching in YBa2Cu3O6x/Nb-doped SrTiO3 heterojunctions. Appl. Phys. Lett. 94, 092111 (2009).
    • (2009) Appl. Phys. Lett. , vol.94 , pp. 092111
    • Zhang, H.J.1    Zhang, X.P.2    Shi, J.P.3    Tian, H.F.4    Zhao, Y.G.5
  • 38
    • 0038650830 scopus 로고    scopus 로고
    • Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
    • Zafar, S., Callegari, A., Gusev, E. & Fischetti, M. V. Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks. J. Appl. Phys. 93, 9298-9303 (2003).
    • (2003) J. Appl. Phys. , vol.93 , pp. 9298-9303
    • Zafar, S.1    Callegari, A.2    Gusev, E.3    Fischetti, M.V.4
  • 39
    • 0013125857 scopus 로고
    • Kinetics of charge trapping in dielectrics
    • Wolters, D. R. & Vanderschoot, J. J. Kinetics of charge trapping in dielectrics. J. Appl. Phys. 58, 831-837 (1985).
    • (1985) J. Appl. Phys. , vol.58 , pp. 831-837
    • Wolters, D.R.1    Vanderschoot, J.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.