Comprehensive physical model of dynamic resistive switching in an oxide memristor

ACS Nano

Volumn 8, Issue 3, 2014, Pages 2369-2376

  Kim, Sungho ^a   Choi, Shinhyun ^a   Lu, Wei ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

diffusion; drift; memristor; oxygen vacancy; physical model

Indexed keywords

DIFFUSION; DYNAMICS; ELECTRIC FIELDS; MATERIALS PROPERTIES; MODELS; OXYGEN VACANCIES; PASSIVE FILTERS; SWITCHING SYSTEMS;

ACCURATE PREDICTION; DRIFT; MEMRISTOR; NEUROMORPHIC SYSTEMS; NON-VOLATILE MEMORY; OXYGEN VACANCY CONCENTRATION; PHYSICAL MODEL; RESISTIVE SWITCHING;

MEMRISTORS;

EID: 84896982143     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn405827t     Document Type: Article

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