Molecular dynamics simulations of oxide memory resistors (memristors)

Nanotechnology

Volumn 22, Issue 25, 2011, Pages

  Savel'Ev, S E ^a   Alexandrov, A S ^a,b   Bratkovsky, A M ^b   Stanley Williams, R ^b  

^a LOUGHBOROUGH UNIVERSITY   (United Kingdom)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILAMENTS; DENSITY FLUCTUATION; LONG RANGE INTERACTIONS; MEMRISTOR; MIMIC SYSTEM; MOLECULAR DYNAMICS SIMULATIONS; NANO-SWITCHES; POLARITY INVERSION; REALISTIC POTENTIALS; SHORT RANGE ORDERING; TWO-TERMINAL DEVICES;

COMPUTER SIMULATION; MEMRISTORS; MOLECULAR OXYGEN; OXYGEN VACANCIES; PASSIVE FILTERS; RESISTORS; STOCHASTIC MODELS;

MOLECULAR DYNAMICS;

EID: 79956128377     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/25/254011     Document Type: Article

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