Conductive-bridge memory (CBRAM) with excellent high-temperature retention

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2013, Pages

  Jameson, J R ^a   Blanchard, P ^a   Cheng, C ^a   Dinh, J ^a   Gallo, A ^a   Gopalakrishnan, V ^a   Gopalan, C ^a   Guichet, B ^a   Hsu, S ^a   Kamalanathan, D ^a   Kim, D ^a   Koushan, F ^a   Kwan, M ^a   Law, K ^a   Lewis, D ^a   Ma, Y ^a   McCaffrey, V ^a   Park, S ^a   Puthenthermadam, S ^a   Runnion, E ^a   Sanchez, J ^a   Shields, J ^a   Tsai, K ^a   Tysdal, A ^a   Wang, D ^a   Williams, R ^a   Kozicki, M N ^a   Wang, J ^a   Gopinath, V ^a   Hollmer, S ^a   Van Buskirk, M ^a   more..

^a Adesto Technologies Corp   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84894385911     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2013.6724721     Document Type: Conference Paper

References (23)

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