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Applied Physics Letters

Volumn 98, Issue 23, 2011, Pages

A physical model for bipolar oxide-based resistive switching memory based on ion-transport-recombination effect

(5) Gao, Bin a Kang, Jinfeng a Liu, Lifeng a Liu, Xiaoyan a Yu, Bin b

a PEKING UNIVERSITY (China)

b STATE UNIVERSITY OF NEW YORK (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILAMENTS; ION TRANSPORTS; MOBILE OXYGEN; PHYSICAL MODEL; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING MEMORIES; SWITCHING CHARACTERISTICS;

IONS; NONVOLATILE STORAGE; OXYGEN; RANDOM ACCESS STORAGE; ZINC OXIDE;

OXYGEN VACANCIES;

EID: 79959335334 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3599490 Document Type: Article

Times cited : (32)

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